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Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE

Published online by Cambridge University Press:  01 February 2011

Panagiotis Dimitrakis ,
Eleftherios Iliopoulos  and
Pascal Normand
Panagiotis Dimitrakis
Affiliation:
[email protected], NCSR Demokritos, Institute of Microelectronics, Ag.Paraskevi, Greece
Eleftherios Iliopoulos
Affiliation:
[email protected], University of Crete, Physics, Heraklion, Greece
Pascal Normand
Affiliation:
[email protected], NCSR Demokritos, Institute of Microelectronics, Ag.Paraskevi, Greece
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Abstract

The growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.

Keywords

memorynanostructurenitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G06-03
Copyright
Copyright © Materials Research Society 2010

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References

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