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Nanobumps in InxAl1-xN/AlN/Sapphire System:A New Kind of Quantum Dots?

Published online by Cambridge University Press:  21 March 2011

Yuri Danylyuk ,
Dmitri Romanov  and
Gregory Auner
Yuri Danylyuk
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, U.S.A.
Dmitri Romanov
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, U.S.A.
Gregory Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, U.S.A.
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Abstract

We have investigated InxAl1-xN layers grown by plasma source molecular beam epitaxy (PSMBE) on c-plane sapphire (0001) substrates with thin (about 100 Å) buffer layers of AlN. The value of x varied from 0 to 1. For all these layers, high resolution X-ray diffraction scans (XRD) show no indication of face segregation, while the atomic force microscope (AFM) images of the structures demonstrate a large number of nanobumps. Our spectroscopic measurements (UV/VIS optical absorption and reflection spectroscopy) of these bumpy structures indicate additional peaks that can be only associated with additional energy levels. We ascribe these levels to electrons, which are confined and quantized near the nanobump tips by strong piezoelectric field caused mainly by biaxial strain of the AlN layer. The calculated energies of these quantized states are in a good agreement with the spectroscopic data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.29.1
Copyright
Copyright © Materials Research Society 2002

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