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Na Impurity Chemistry in Photovoltaic Cigs thin-Films: An Investigation with Photo- and Auger Electron Spectroscopies

Published online by Cambridge University Press:  10 February 2011

D. W. Niles ,
K. Ramanathan ,
J. Granata ,
F. Hasoon ,
R. Noufi ,
B. J. Tielsch  and
J. E. Fulghum
D. W. Niles
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401
K. Ramanathan
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401
J. Granata
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401
F. Hasoon
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401
R. Noufi
Affiliation:
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401
B. J. Tielsch
Affiliation:
Chemistry Department, Kent State University, Kent, OH 44242
J. E. Fulghum
Affiliation:
Chemistry Department, Kent State University, Kent, OH 44242
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Abstract

The incorporation of Na into Cu(Inl-xGax)Se2 thin-films is known to lead to an improvement in device performance. The authors use X-ray photoelectron and Auger electron spectroscopies to determine the chemical nature of Na in Cu(Inl-xGax)Se2 thin-films. The Na concentration is determined to be ∼ 0.1 atomic percent in the bulk of Cu(In1-xGax)Se2 thin-films. The Na is chemically bonded to Se. The authors propose a model invoking the replacement of column III elements by Na during the growth of Cu(Inl-xGax)Se2 thin-films. These Nain and NaGa defects act as acceptor states to increase the p-type conductivity of Cu(In1-xGax)Se2 thin-films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 179
Copyright
Copyright © Materials Research Society 1998

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