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Multi-Step Rapid Thermal Annealing of Si-Implanted Gaas for Microwave Discrete Devices and Monolithic Integrated Circuits Fabrication

Published online by Cambridge University Press:  26 February 2011

Tan-Hua Yu ,
W. M. Kong ,
L. F. Lester ,
P. M. Smith ,
K. H. G. Duh  and
J. C. M. Hwang
Tan-Hua Yu
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
W. M. Kong
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
L. F. Lester
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
P. M. Smith
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
K. H. G. Duh
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
J. C. M. Hwang
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
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Abstract

In this paper, we report a multi-step rapid thermal annealing process for microwave discrete devices and monolithic integrated circuits fabrication. 2” diameter undoped liquid encapsulated Czochralski GaAs wafers were implanted with 29 Si+ and annealed without capping using incoherent light from high intensity halogen lamps. The annealing was carried out in multiple temperature steps to achieve optimum damage removal and dopant activation. As a result, wafers implanted with mid 1012 cm−2 dose exhibited 85–90% activation efficiency for 100kV implant and nearly 100% activation for 300 kV implant. In comparison with single-stepannealed wafers, multi-step-annealed wafers showed not only higher activation efficiency, but also more uniform activation, higher electron mobility and better device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 417
Copyright
Copyright © Materials Research Society 1986

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References

1. Kanber, H., Henderson, W.B., Rush, R.C., Siracusa, M. and Whelan, J.M.. Appl. Phys. Lett. 47 (2), 120 (1985)Google Scholar
2. Clark, R.C., Eldridge, G.W., Wang, S.K. and Valek, W.F.. IEEE Trans. Electron Devices, ED–31, NO. 8, 1077 (1984)CrossRefGoogle Scholar
3. Pearton, S.J., Cummings, K.D. and Vella-Coleriro, G.P.. J. Electrochem. Soc. Solid-State Science Technology, Nov. 1985, 2743CrossRefGoogle Scholar
4. Seo, Kwang S., Dhar, Sunanda and Bhattacharya, Pallab K., Appl. Phys. Lett. 47(5), 500 (1985)CrossRefGoogle Scholar
5. Liu, S.G. and Narayau, S.Y.. J. Electron Material 13(6), 897 (1984)Google Scholar
6. Yu, T., presented at the 1984 PEAP Workshop at University of Illinois, Urbana, Illinois (unpublished)Google Scholar
7. Christal, L.A. and Gibbons, J.F.. J. Appl Phys 52(8), 5050 (1981)Google Scholar
8. Fukui, Hatsuaki, IEEE Trans Electron Devices, ED–26, NO 7, 1032 (1979)Google Scholar