Published online by Cambridge University Press: 15 February 2011
This paper describes the conditions for activating ion implants in a range of semiconductor materials in the solid state. This includes phosphorus and arsenic implants into silicon, boron and phosphorus implants into SOS, gallium into germanium and silicon into gallium arsenide. For each material the restoration of electrical activity correlates with structural data from RBS analysis. Negligible implant diffusion occurs for the typical annealing treatments which result in full activation of dopants.