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A Multi-Component Model for the Growth and Relaxation of Epitaxial Thin Films

Published online by Cambridge University Press:  17 March 2011

Simon P.A. Gill ,
Fei Long  and
Alan C.F. Cocks
Simon P.A. Gill
Affiliation:
Department of Engineering, University of Leicester, Leicester, United Kingdom, LE1 7RH
Fei Long
Affiliation:
Department of Engineering, University of Leicester, Leicester, United Kingdom, LE1 7RH
Alan C.F. Cocks
Affiliation:
Department of Engineering, University of Leicester, Leicester, United Kingdom, LE1 7RH
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Abstract

A variational approach to the modelling of growth and relaxation in elastically strained epitaxial thin films and islands is presented. The continuum model is derived for a twocomponent material system evolving via the kinetic mechanisms of evaporation/condensation and surface and lattice diffusion under the influence of elastic mismatch strain, surface tension and combinational phase energy. Phenomena such as surface segregation and interdiffusion between the film and the substrate are incorporated into the model. This approach is illustrated by a 2D simulation of the onset of instabilities during the growth of epitaxial thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.8
Copyright
Copyright © Materials Research Society 2002

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References

1.Chaparro, S.A., Drucker, J., Zhang, Y., Chandresekhar, D., McCartney, M.R. and Smith, D.J., Phys. Rev. Lett. 83 1199 (1999).Google Scholar
2.Lui, N., Tersoff, J., Baklenov, O., Holmes, A.L. & Shih, C.K., Phys. Rev. Lett. 84 334 (2000).Google Scholar
3.Liao, X.Z., Zou, J., Cockayne, D.J.H., Leon, R. and Lobo, C., Phys. Rev. Lett. 82 5148 (1999).Google Scholar
4.Spencer, B.J., Voorhees, P.W. & Tersoff, J., Appl. Phys. Lett. 76 3022 (2000).Google Scholar
5.Cocks, A.C.F., Gill, S.P.A. and Pan, J., Adv. Appl. Mech. 36 81 (1999).Google Scholar
6.Gill, S.P.A. and Cocks, A.C.F., J. Phys. IV France 9, Pr9–83 (1999).Google Scholar
7.Long, F., Gill, S.P.A. and Cocks, A.C.F., Phys. Rev. B 64 (12), 1307 (2001).Google Scholar
8.Lu, W. and Suo, Z., J. Mech. Phys. Solids 49 1937 (2001).Google Scholar