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MRS 2001 (Boston): Design and Quantification of a Nanoscale Field Effect Transistor: Distributed Response Analysis for Investigating Conductive Behaviour.
Published online by Cambridge University Press: 15 March 2011
Abstract
A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951-7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.
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- Copyright © Materials Research Society 2002