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Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE

Published online by Cambridge University Press:  10 February 2011

Shukun Duan ,
Xuegong Teng ,
Yenran Li ,
Yutian Wang ,
Peide Han  and
Dacheng Lu
Shukun Duan
Affiliation:
National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
Xuegong Teng
Affiliation:
National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
Yenran Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing CHINA 100083
Yutian Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing CHINA 100083
Peide Han
Affiliation:
Beijing Laboratory of Electron Microscopy Center of Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 2724, Beijing 100080, CHINA, E-mail:, [email protected]
Dacheng Lu
Affiliation:
Laboratory of Semiconductor Materials of Sciences, Institute of Semiconductors, The Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
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Abstract

We have studied the growth of GaN on (0001) sapphire and (111) spinel substrates by LP-MOVPE and compared the mosaic structure and cathodoluminescence for the heteroepitaxial films of GaN grown on these substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 207
Copyright
Copyright © Materials Research Society 1997

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References

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