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Morphology of Damage in Al Films Tested Under Electromigration Conditions Using the Drift Velocity Method

Published online by Cambridge University Press:  21 February 2011

Oleg V Kononenko  and
V.N. Matveev
Oleg V Kononenko
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Moscow District, Russia.
V.N. Matveev
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Moscow District, Russia.
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Abstract

Pure Al films deposited by the partially ionized beam technique at bias Iavels of 0, 3 and 6 kV onto TiN sublayers were patterned for measurement for direct drift velocities. Then films were annealed in a vacuum 10−4 Pa for 1 hour. Electromigration tests were performed in an air atmosphere at a temperature of 280°C. The current density during tests was 6·105 A/cm2. Examinations in the SEM showed that the morphology of the damage on cathode and anode ends of the Al stripes depends on the bias during deposition. In the case of 0 kV bias, voids nucleate on the back and side edges of the cathode end and propagate toward the anode end. Hillock and whisker formation was observed on the anode end. The height and diameter of the whiskers were about 50 and 1–2 μm, respectively. In the case of 3 and 6 kV bias the drifting edge was smooth. Only hillocks (no whiskers) grew on the anode edge. The morphological differences of these films are discussed on the basis of self-ion bombardment effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 501
Copyright
Copyright © Materials Research Society 1995

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