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Morphological study of InN films and nanorods grown by H-MOVPE

Published online by Cambridge University Press:  01 February 2011

Hyun Jong Park ,
Sang Won Kang ,
Olga Kryliouk  and
Tim Anderson
Hyun Jong Park
Affiliation:
[email protected], University of Florida, Chemical Engineering, Bldg. 723 Room 118, Chemical Engineering, University of Florida, Gainesville, FL, 32611-6005, United States, 352-846-2989, 352-392-9513
Sang Won Kang
Affiliation:
[email protected], University of Florida, Chemical Engineering, United States
Olga Kryliouk
Affiliation:
[email protected], University of Florida, Chemical Engineering, United States
Tim Anderson
Affiliation:
[email protected], University of Florida, Chemical Engineering, United States
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Abstract

Hydride-Metalorganic Vapor Phase Epitaxy (H-MOVPE) was used to grow a series of films on c-Al2O3 substrates. Depending on the growth temperature and HCl/TMIn molar ratio, InN deposited as a continuous film or a collection of micro or nanorods, or no InN growth was observed. A chemical equilibrium analysis of the In-N-H-Cl system predicts both InN growth and etching regimes with the nanorod growth observed near the growth-etching transition. All InN rod structures demonstrated well faceted hexagonal structure with a near random orientation of the rods, while the films were polycrystalline.

Keywords

Innitridemorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-09
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Lu, H., Schaff, W.J., Eastman, L.F., Mater. Res. Soc. Symp. Proc. 693 (2002) 9.Google Scholar
[2] Kryliouk, O., Park, H.J., Wang, H.T., Kang, B.S., Anderson, T.J., Ren, F. and Pearton, S.J., J. Vac. Sci. Technol. B, 23(5), 1891(2005).CrossRefGoogle Scholar
[3] Lu, H., Schaff, W.J., Eastman, L.F., J. Appl. Phys. 96 (2004) 3577.CrossRefGoogle Scholar
[4] Yamamoto, A., Tsujino, M., Ohkubo, M., Hashimoto, A., Sol. Energy Mater. Sol. Cells 35 (1994) 53.CrossRefGoogle Scholar
[5] Starikov, E., Shiktorov, P., Gruzinskis, V., Reggiani, L., Varani, L., Vaissiere, J.C., Zhao, Jian H., Physica B 314 (2002) 171.CrossRefGoogle Scholar
[6] Inushima, T., Mamutin, V.V., Vekshin, V.A., Ivanov, S.V., Sakon, T., Motokawa, M., Ohoya, S., J. Cryst. Growth 227–228 (2001) 481.CrossRefGoogle Scholar
[7] Davydov, V. Yu, Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, A.J., Graul, J., Haller, E.E., Phys. Status Solidi b 230 (2002) R4.3.0.CO;2-Z>CrossRef3.0.CO;2-Z>Google Scholar
[8] Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager, J.W. III, Haller, E.E., Lu, Hai, Schaff, W.J., Phys. Rev. B 66 (2002) 201403.CrossRefGoogle Scholar
[9] Sugita, K., Takatsuka, H., Hashimoto, A., Yamamoto, A., Phys. Status Solidi b 240 (2003) 421.CrossRefGoogle Scholar
[10] Briot, O., Maleyre, B., Ruffenach, S., Gil, B., Pinquier, C., Demangeot, F., Frandon, J., J. Cryst. Growth 269 (2004) 22.CrossRefGoogle Scholar
[11] Butcher, K.S.A., Wintrebert-Fouquet, M., Chen, P.P.-T., Prince, K.E., Timmers, H., Shrestha, S.K., Shubina, T.V., Ivanov, S.V., Wuhrer, R., Phillips, M.R., Monemar, B., Phys. Status Solidi c 2 (2005) 2263.Google Scholar
[12] Hovel, H.J., Cuomo, J.J., Appl. Phys. Lett. 20 (1972) 71.CrossRefGoogle Scholar
[13] Tyagai, V.A., Evstigneev, A.M., Krasiko, A.N., Andreeva, A.F., Malakhov, V.Ya., Sov. Phys. Semicond. 11 (1977) 1257.Google Scholar
[14] Natarajan, B.R., Eltoukhy, A.H., Greene, J.E., Barr, T.L., Thin Solid Films 69 (1980) 201.CrossRefGoogle Scholar
[15] Tansley, T.L., Foley, C.P., J. Appl. Phys. 59 (1986) 3241.CrossRefGoogle Scholar
[16] Westra, K.L., Lawson, R.P.W., Brett, M.J., J. Vac. Sci. Technol. A 6 (1988) 1730.CrossRefGoogle Scholar
[17] Sullivan, B.T., Parsons, R.R., Westra, K.L., Brett, M.J., J. Appl. Phys 64 (1988) 144.CrossRefGoogle Scholar
[18] Butcher, K.S.A., Wintrebert-Fouquet, M., Chen, P.P.-T., Tansley, T.L., Sriheaw, S., Mater. Res. Symp. Proc. 693 (2002) 341.Google Scholar
[19] Motlan, , Goldys, E.M., Tansley, T.L., J. Cryst. Growth 241 (2002) 165.CrossRefGoogle Scholar
[20] Haddad, D.B., Takur, J.S., Naik, V.M., Auner, G.W., Naik, R., Wenger, L.E., Mater Res. Soc. Symp. Proc. 743 (2003) 701.Google Scholar
[21] Jain, A., Raghavan, S., Redwing, J.M., J. Cryst. Growth 269 (2004) 128.CrossRefGoogle Scholar
[22] Takahashi, N., Niwa, A., Nakamura, T., J. Phys. Chem. Solids 65 (2004) 1259.CrossRefGoogle Scholar
[23] Dimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A. and Georgakilas, A., J. Cryst. Growth, 278(2005) 367.CrossRefGoogle Scholar
[24] Grandal, J., Sanchez-Garcia, M.A., J. Cryst. Growth 278 (2005) 373.CrossRefGoogle Scholar
[25] Yamamoto, A., Adachi, M., Hashimoto, A., J. Cryst. Growth 230 (2001) 351.CrossRefGoogle Scholar
[26] Sato, Y., Sato, S., J. Cryst. Growth 146 (1995) 262.CrossRefGoogle Scholar
[27] Yamamoto, A., Shin-ya, T., Sugiura, T., Hashimoto, A., J. Cryst. Growth 189/190 (1998) 461.CrossRefGoogle Scholar
[28] Bi, Z.X., Zhang, R., Xie, Z.L., Xiu, X.Q., Ye, Y.D., Liu, B., Gu, S.L., Shen, B., Shi, Y., Zheng, Y.D., Mater. Lett. 58 (2004) 3641.CrossRefGoogle Scholar
[29] Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, (2003)14.Google Scholar
[30] Kang, S.W., diss., University of Florida 2004.Google Scholar
[31] Lan, Z.H., Wang, W.M., Sun, C.L., Shi, S.C., Hsu, C.W., Chen, T.T., Chen, K.H., Chen, C.C., Chen, Y.F., Chen, L.C., J. Cryst. Growth 269 (2004) 87.CrossRefGoogle Scholar
[32] Zhang, J., Zhang, L., Peng, X. and Wang, X., J. Mater. Chem (2002) 12, 802.CrossRefGoogle Scholar
[33] Liang, C. H., Chen, L. C., Hwang, J. S., Chen, K. H., Hung, Y. T. and Chen, Y. F., Appl. Phys. Lett. 81, 22 (2002).CrossRefGoogle Scholar
[34] Johnson, M. C., Lee, C. J., Bourret-Courchesne, E. D., Konsek, S. L., Aloni, S., Han, W. Q., and Zettl, A., Appl. Phys. Lett. 85, 5670 (2004).CrossRefGoogle Scholar
[35] Kryliouk, O., Reed, M., Dann, T., Anderson, T. and Chai, B., Mat. Sci. Eng. B59, 116–119 (1999).Google Scholar
[36] Sundman, B., Jansson, B., Andersson, J.O., CALPHAD 9 (1985) 153.CrossRefGoogle Scholar