Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T16:16:49.510Z Has data issue: false hasContentIssue false

Morphological Change of a PbSe film grown by Chemical Bath Deposition during Sensitization

Published online by Cambridge University Press:  25 May 2015

Youngjoon Suh
Affiliation:
Center for Electronic Materials, Korea Institute of Science and Technology, 5. Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea
Sang Hee Suh
Affiliation:
Center for Electronic Materials, Korea Institute of Science and Technology, 5. Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea
Get access

Abstract

A PbSe film was grown by chemical bath deposition on a thermally oxidized Si (111) substrate. Morphological change of the PbSe film during sensitization under the oxygen and iodine atmospheres was studied by SEM. The as-grown polycrystalline PbSe film consists of clusters of about 200nm in diameter. By the oxidation treatment for 30 min at 380°C, the clusters became joined together. On the other hand, recrystallization of new PbSe crystals with faceted surfaces occurred during the iodination treatment under an iodine plus nitrogen atmosphere at 380°C for different durations. This morphological change during the sensitization treatment might affect the electro-optical properties of the PbSe film.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Beystrum, T., Himoto, R., Jacksen, N., and Sutton, M., Infrared Technology and Applications XXX, Proc. SPIE 5406, 287 (2004).CrossRefGoogle Scholar
Qiu, J., Weng, B., Yuan, Z., and Shi, Z., J. Appl. Phys. 113, 103102 (2013).CrossRefGoogle Scholar
Rodrigo, M.T., Sanchez, F.J., Torquemada, M.C., Villamayor, V., Vergara, G., Verdu, M., Gomez, L.J., Diezhandino, J., Almazan, R., Rodriguez, P., Plaza, J., Catalan, I., Montojo, M.T., Infrared Physics & Technology 44, 281 (2003).CrossRefGoogle Scholar
Torquemada, M. C., Rodrigo, M. T., Vergara, G., Sanchez, F. J., Almazan, R., Verdu, M., Rodriguez, P., Villamayor, V., Gomez, L. J., and Montojo, M. T., J. Appl. Phys. 93, 1778 (2003).Google Scholar
Vergara, G., Linares Herrero, R., Gutiérrez Álvarez, R., Fernández Montojo, C., Gómez, L.J., Villamayor, V., Baldasano Ramírez, A. and Montojo, M.T., Infrared Technology and Applications XXXIX, Proc. SPIE 8704, 87041M (2013).CrossRefGoogle Scholar
Petritz, R. L., Phys. Rev. 104, 1508 (1956).CrossRefGoogle Scholar
Horn, S., Lohrmann, D., Norton, P., McCormack, K., and Hutchinson, A., Proc. SPIE 5783, 401 (2005).CrossRefGoogle Scholar
Gorer, S., Albu-Yaron, A., and Hodes, G., Chem. Mater. 7, 1243 (1995).CrossRefGoogle Scholar