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Monolithic Integration of III-V Microcavity Leds on Silicon Drivers using Conformal Epitaxy

Published online by Cambridge University Press:  10 February 2011

B. Gérard ,
X. Marcadet ,
P. Etienne ,
D. Pribat ,
D. Friedrich ,
J. Eichholz ,
H. Bemt ,
H. Hanssen ,
J-F. Carlin  and
M. Ilegems
B. Gérard
Affiliation:
THOMSON-CSF/LCR, F-91404 Orsay, France, [email protected]
X. Marcadet
Affiliation:
THOMSON-CSF/LCR, F-91404 Orsay, France, [email protected]
P. Etienne
Affiliation:
THOMSON-CSF/LCR, F-91404 Orsay, France, [email protected]
D. Pribat
Affiliation:
THOMSON-CSF/LCR, F-91404 Orsay, France, [email protected]
D. Friedrich
Affiliation:
Fraunhofer Institute for Silicon Technology, D-25524 Itzehoe, Germany
J. Eichholz
Affiliation:
Fraunhofer Institute for Silicon Technology, D-25524 Itzehoe, Germany
H. Bemt
Affiliation:
Fraunhofer Institute for Silicon Technology, D-25524 Itzehoe, Germany
H. Hanssen
Affiliation:
Fraunhofer Institute for Silicon Technology, D-25524 Itzehoe, Germany
J-F. Carlin
Affiliation:
Institute for Micro- and Opto-electronic, Ecole Polytechnique Federale, CH-1015 Lausanne, Switzerland.
M. Ilegems
Affiliation:
Institute for Micro- and Opto-electronic, Ecole Polytechnique Federale, CH-1015 Lausanne, Switzerland.
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Abstract

Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the III-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V seed, the vertical growth being stopped by an overhanging capping layer. As an example, conformal GaAs layers on Silicon, presenting dislocation densities below 105cm−2, have been obtained using selective vapor phase epitaxy. These layers have then been used as high quality GaAs on Si substrates for subsequent vertical MBE regrowth of active structures. In this paper, we report on the integration of surface-emitting microcavity LEDs with their silicon drivers using this conformal growth technique. The global technology concept and the design of the active structures are first presented. The compatibility of the conformal growth technique with CMOS technology is then checked: the impact of the integration process on the performances of the drivers is for example quantified. Characterisations of the high crystalline quality of the conformal layers and of the LEDs structures grown on it are then shown. The electro-optical characteristics of the LEDs on Si are finally compared to those of reference LEDs on GaAs substrates in order to prove the efficiency of the integration procedure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 139
Copyright
Copyright © Materials Research Society 1999

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