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Monolithic Integration of Electronics and Sub-wavelength Metal Optics in Deep Submicron CMOS Technology

Published online by Cambridge University Press:  01 February 2011

Peter B. Catrysse
Peter B. Catrysse*
Affiliation:
Edward L. Ginzton Laboratory, Department of Electrical Engineering, Stanford University,Stanford, CA 94305-4088, U.S.A.
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Abstract

The structures that can be implemented and the materials that are used in complementary metal-oxide semiconductor (CMOS) integrated circuit (IC) technology are optimized for electronic performance. However, they are also suitable for manipulating and detecting optical signals. In this paper, we show that while CMOS scaling trends are motivated by improved electronic performance, they are also creating new opportunities for controlling and detecting optical signals at the nanometer scale. For example, in 90-nm CMOS technology the minimum feature size of metal interconnects reaches below 100 nm. This enables the design of nano-slits and nano-apertures that allow control of optical signals at sub-wavelength dimensions. The ability to engineer materials at the nanoscale even holds the promise of creating meta-materials with optical properties, which are unlike those found in the world around us. As an early example of the monolithic integration of electronics and sub-wavelength metal optics, we focus on integrated color pixels (ICPs), a novel color architecture for CMOS image sensors. Following the trend of increased integration in the field of CMOS image sensors, we recently integrated color-filtering capabilities inside image sensor pixels. Specifically, we demonstrated wavelength selectivity of sub-wavelength patterned metal layers in a 180-nm CMOS technology. To fulfill the promise of monolithic photonic integration and to design useful nanophotonic components, such as those employed in ICPs, we argue that analytical models capturing the underlying physical mechanisms of light-matter interaction are of utmost importance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D1.5
Copyright
Copyright © Materials Research Society 2005

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References

1 ITRS, International Roadmap for Semiconductors, Executive Summary (2004).Google Scholar
2 Loncar, M., Doll, T., Vuckovic, J.et al., Journal Of Lightwave Technology 18 (10), 1402 (2000).Google Scholar
3 Plummer, James D., Deal, Michael D., and Griffin, Peter B., Silicon VLSI technology: fundamentals, practice and modeling. (Prentice Hall, Upper Saddle River, NJ, 2000).Google Scholar
4 Hertz, Heinrich, Annalen der Physik und Chemie 36 (4), 769 (1889).Google Scholar
5P.Bliek, J., Botten, L.C., Deleuil, R.et al., IEEE Transactions on Microwave Theory and Techniques 28 (10), 1119 (1980).Google Scholar
6 Tamada, H., Doumuki, T., Yamaguchi, T.et al., Optics Letters 22 (6), 419 (1997).Google Scholar
7 Moore, G.E., Electronics 38 (8), 114 (1965).Google Scholar
8 Postava, K., Yamaguchi, T., and Nakano, T., Optics Express 9 (3), 141 (2001).Google Scholar
9 Postava, K., Yamaguchi, T., and Horie, M., Applied Physics Letters 79 (14), 2231 (2001).Google Scholar
10 Ordal, M. A., Bell, R. J., Alexander, R. W. Jr, et al., Applied Optics 24 (24), 4493 (1985).Google Scholar
11 Ordal, M. A., Long, L. L., Bell, R. J.et al., Applied Optics 22 (7), 1099 (1983).Google Scholar
12 Joannopoulos, J. D., Villeneuve, P. R., and Fan, S. H., Nature 386 (6621), 143 (1997).Google Scholar
13 Barnes, W. L., Dereux, A., and Ebbesen, T. W., Nature 424 (6950), 824 (2003).Google Scholar
14 Catrysse, P. B. and Wandell, B. A., Journal Of The Optical Society Of America A20 (12), 2293 (2003).Google Scholar
15 Gamal, A. El, Yang, David, and Fowler, Boyd, in Sensors, Cameras, and Applications for Digital Photography, edited by Sampat, Nitin and Yeh, Thomas (SPIE, Bellingham, 1999), Vol. 3650, pp. 2.Google Scholar
16 Catrysse, P.B., Wandell, B.A., and Gamal, A. El, in 2001 International Electron Devices Meeting - Technical Digest (IEEE, Piscataway, NJ, 2001), pp. 559.Google Scholar
17 Wandell, Brian A., Foundations of vision. (Sinauer Associates, Sunderland, Mass., 1995).Google Scholar
18 Catrysse, P. B., Suh, W. J., Fan, S. H.et al., Optics Letters 29 (9), 974 (2004).Google Scholar