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Monitoring of Sidewall Spacer Etch by Optical Emission Spectroscopy and Mass Spectroscopy

Published online by Cambridge University Press:  10 February 2011

K. Min ,
J. J. Chambers ,
G. N. Parsons  and
J. R. Hauser
K. Min
Affiliation:
Dept. of ECE, North Carolina State University, Raleigh, NC 27695, [email protected]
J. J. Chambers
Affiliation:
Dept. of CHE, North Carolina State University, Raleigh, NC 27695
G. N. Parsons
Affiliation:
Dept. of CHE, North Carolina State University, Raleigh, NC 27695
J. R. Hauser
Affiliation:
Dept. of ECE, North Carolina State University, Raleigh, NC 27695, [email protected]
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Abstract

Selective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 157
Copyright
Copyright © Materials Research Society 1998

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References

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