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Monitoring and Controlling of Strain During Mocvd of AlGaN for UV Optoelectronics

Published online by Cambridge University Press:  15 February 2011

Jung Han ,
M. H. Crawford ,
R. J. Shul ,
S. J. Hearne ,
E. Chason ,
J. J. Figiel  and
M. Banas
Jung Han*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. H. Crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. J. Hearne
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. J. Figiel
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. Banas
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
*
*Corresponding author. Present address: Sandia Nationa Laboratories, MS-0601, P.O. Box 5800, Albuquerque, New Mexico 87185-0601, Fax: 505-844-3211, email: [email protected]
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Abstract

The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AIGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AIN buffer layers results in a reduced and possibly controllable strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G7.7
Copyright
Copyright © Materials Research Society 1999

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