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Molecular Dynamics Simulations and Experimental Evidence for Deep Penetration by Channeled Ions During Low-Energy Ion Bombardment of III-V Semiconductors

Published online by Cambridge University Press:  25 February 2011

N.G. Stoffel ,
S.A. Schwarz ,
M.A.A. Pudensi ,
K. Kash ,
L.T. Florez ,
J.P. Harbison  and
B.J. Wilkens
N.G. Stoffel
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
S.A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
M.A.A. Pudensi
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
K. Kash
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
L.T. Florez
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
J.P. Harbison
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
B.J. Wilkens
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
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Abstract

Molecular dynamics simulations are used to investigate the formation of deep crystalline damage during the low-energy ion bombardment of semiconductor crystals. The trajectories of primary ions are calculated as they propagated through a model crystal lattice. Energy losses by nuclear recoil and and by electronic excitation are included. For beams of heavy ions at energies below 1 keV, the average penetration range of the simulated trajectories is only a few nanometers. However, a small, but, significant fraction of the ions are found to scatter into <011= axial channels through which they propagate tens of nm below the surface. This effect is used to explain high-resolution secondary ion mass spectrometry and photoluminescence data which reveal deep ion penetration and optical damage on the same length scale. Our results suggest that unintentional ion channeling is a major factor in the extensive degradation of optical and electrical properties of semiconductor surfaces which are exposed to low energy ion bombardment during device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 247
Copyright
Copyright © Materials Research Society 1992

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