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Molecular Beam Epitaxy of Single Crystal Colossal Magneto-Resistive Material

Published online by Cambridge University Press:  15 February 2011

J. N. Eckstein ,
I. Bozovic ,
M. Rzchowski ,
J. O'donnell ,
B. Hinaus  and
M. Onellion
J. N. Eckstein
Affiliation:
E.L. Ginzton Research Center, Varian Associates, Palo Alto, CA 94304
I. Bozovic
Affiliation:
E.L. Ginzton Research Center, Varian Associates, Palo Alto, CA 94304
M. Rzchowski
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI
J. O'donnell
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI
B. Hinaus
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI
M. Onellion
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI
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Abstract

We have grown films of (LaSr)MnO3 (LSMO) and (LaCa)MnO3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 467
Copyright
Copyright © Materials Research Society 1996

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