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Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

Published online by Cambridge University Press:  21 February 2012

Mohana K. Rajpalke ,
Thirumaleshwara N. Bhat ,
Basanta Roul ,
Mahesh Kumar  and
S. B. Krupanidhi
Mohana K. Rajpalke
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
Thirumaleshwara N. Bhat
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
Basanta Roul
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA Central Research Laboratory, Bharat Electronics, Bangalore-560013, INDIA
Mahesh Kumar
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA Central Research Laboratory, Bharat Electronics, Bangalore-560013, INDIA
S. B. Krupanidhi*
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
*
*E-mail:[email protected]
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Abstract

Nonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Keywords

III-Vthin filmmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-11
Copyright
Copyright © Materials Research Society 2012

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References

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