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Modification of Sol-Gel Thin Films By Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Hiroshi Hirashima ,
Kenji Adachi  and
Hiroaki Imai
Hiroshi Hirashima
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Kenji Adachi
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Hiroaki Imai
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
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Abstract

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 183
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Arnold, G.W., Rad. Eff., 65, 257 (1982).Google Scholar
2 Magruder, R.H., Weeks, R.A., Zuhr, R.A. and Whichard, G., J. Non-Cryst. Solids, 129, 46 (1991).Google Scholar
3 Schultze, J.W., Elfenthal, L., Leltner, K. and Meyer, O., Mater. Sei. Eng., 90, 253 (1987).Google Scholar
4 Elfenthal, L. and Schultze, J. W., Ber. Bunsenges. Phys. Chem., 92, 1387 (1988).Google Scholar
5 Emisse, E.P., J. Appl. Phys., 45, 167 (1974).Google Scholar
6 Chengyu, W., Ying, T. and Shuchu, W., J. Non-Cryst. Solids, 52, 589 (1982).Google Scholar
7 Fukumi, K., Chayahara, A. and Satou, M., J. Appl. Phys. Pt. 1, 29, 905 (1990).Google Scholar
8 Fukumi, K., Chayahara, A., Hayakawa, J. and Satou, M., J. Non-Cryst. Solids, 128, 126 (1991).Google Scholar
9 Hosono, H., J. Appl. Phys., 69, 8079 (1991).Google Scholar
10 Shacahama-Diamond, Y., Moriya, N. and Kalish, R., in Better Ceramics Through Chemistry IV, edited by Zelinski, B.J.J., Brinker, C.J., Clark, D.E. and Ulrich, D.R. (Mater. Res Soc. Proc, 180, Pittsburgh, PA, 1990)pp.703–708.Google Scholar
11 Levine, T.E., Keddie, J.E., Revesz, P., Mayer, J.W. and Giannelis, E.P., J. Amer. Ceram. Soc, 76, 1369 (1993).Google Scholar
12 Hirashima, H. and Kusaka, T., in Better Ceramics Through Chemistry V, edited by Hampden-Smith, M.J., Klemperer, W.G. and Brinker, C.J. (Mater. Res. Soc. Proc, 271, Pittsburgh, PA, 1992) pp.443–448.Google Scholar
13 Mazzoldy, P. and Arnold, G.W., Ion Beam Modification of Insulators (Elsevier Science Publishers, Amsterdam, 1987) pp.709–712.Google Scholar
14 Ji-Jian, Chen and Wei, Chen, J. Non-Cryst. Solids, 80, 135 (1986).Google Scholar