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Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Alok Nandini ,
U. Roy ,
A. Mallikarjunan ,
A. Kumar ,
J. Fortin ,
G.S. Shekhawat ,
Robert Geer ,
Katherine Dovidenko ,
Eric Lifshin  and
H. Bakhru
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Alok Nandini
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
U. Roy
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
A. Mallikarjunan
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
A. Kumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
J. Fortin
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
G.S. Shekhawat
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Robert Geer
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Katherine Dovidenko
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
Eric Lifshin
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
H. Bakhru
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222, U.S.A
T.M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.19
Copyright
Copyright © Materials Research Society 2002

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References

1. Lee, W.W. and Ho, P.S. MRS Bulletin 22, 19 (1997)Google Scholar
2. Morgen, M., Ryan, E.T., Zhao, J-H, C.Hu, Cho, T., and Ho, P.S. Annu Rev.Mater.Sci. 30, 645 (2000)Google Scholar
3.ITRS 2001 edition. International Technology Roadmap for Semiconductors Home Page, http://public.itrs.net (accessed January 2002)Google Scholar
4. Kolosov, Oleg, Yamanaka, Kazushi, Jpn. J. Appl. Phys. Vol. 32, 1993, pp. 1095–1098.Google Scholar
5. Oliver, W.C. and Pharr, G.M., J.Mater.Res.7, p.1564 (1992).Google Scholar
6. Dinelli, F., Biswas, S.K. Phys. Rev. B Vol. 61(20), May 2000 Google Scholar
7. Tsaur, B.Y., Liau, Z.L., Mayer, J.W., Appl. Phys. Lett. 34, 168 (1979)Google Scholar
8. Ziegler, J.F. and Chu, W.K., At. and Nucl. Data Tables 13,481(1974)Google Scholar