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Modification of InN Properties by Interactions with Hydrogen and Nitrogen

Published online by Cambridge University Press:  01 February 2011

Maria Losurdo ,
Maria Michela Giangregorio ,
Giovanni Bruno ,
Tong-Ho Kim ,
Pae Wu ,
Soojeong Choi ,
Mike Morse ,
April Brown ,
Francesco Masia  and
Antonio Polimeni
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Maria Losurdo
Affiliation:
[email protected], IMIP-CNR, PLASMACHEMISTRY, VIA ORABONA 4, BARI, BARI, 70125, Italy, +39.0805443562, +39.0805442024
Maria Michela Giangregorio
Affiliation:
[email protected]
Giovanni Bruno
Affiliation:
[email protected], IMIP-CNR, PLASMACHEMISTRY, Italy
Tong-Ho Kim
Affiliation:
[email protected], Duke University, Electrical and Comp Engin, United States
Pae Wu
Affiliation:
[email protected], Duke University, Electrical and Comp Engin, United States
Soojeong Choi
Affiliation:
[email protected], Duke University, Electrical and Comp Engin, United States
Mike Morse
Affiliation:
[email protected], Duke University, Electrical and Comp Engin, United States
April Brown
Affiliation:
[email protected], Duke University, Electrical and Comp Engin, United States
Francesco Masia
Affiliation:
[email protected], Universita La Sapienza, Physics, Italy
Antonio Polimeni
Affiliation:
[email protected], Universita La Sapienza, Physics, Italy
Mario Capizzi
Affiliation:
[email protected], Universita La Sapienza, Physics, Italy
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Abstract

The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with atomic hydrogen and nitrogen, produced by remote r.f. H2 and N2 plasmas, is investigated. InN strongly reacts with both atomic hydrogen and nitrogen yielding depletion of nitrogen and concurrent formation of In clusters. The impact of hydrogen treatments on the optical properties of InN is assessed using photoluminescence (PL). It is found that hydrogen suppresses the intense PL band peaked at approximately 0.7eV for the as-grown InN epitaxial layers, and results in the appearance of a new PL band whose peak energy and intensity increase with H-dose. The effect of exposure to atomic hydrogen and nitrogen on electrical properties of InN is investigated using Hall effect measurements. Atomic force microscopy is also used for studying the morphological changes of InN upon interaction with atomic hydrogen and nitrogen.

Keywords

nitridemolecular beam epitaxy (MBE)optical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF08-03
Copyright
Copyright © Materials Research Society 2006

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References

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