Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T15:39:13.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Modelling Electromigration and Stress Migration Damage in Advanced Interconnect Structures

Published online by Cambridge University Press:  10 February 2011

Dirk Brown
Dirk Brown*
Affiliation:
Advanced Micro Devices, Advanced Interconnect Process Development One AMD Place, P.O. Box 3453, MS 160, Sunnyvale, CA
Get access

Abstract

Physical and statistical models have been used extensively to understand and improve electromigration and stress migration induced damage in narrow metal interconnects. As devices continue to shrink, and the interconnect delay becomes a more important fraction of overall circuit delay, the semiconductor industry has begun to make several important changes to the ‘standard’ Al-based interconnect technologies, including (i) a move from metal deposition and metal etch to metal deposition into damascene and dual-damascene structures, (ii) a move from Al-based to Cu-based metallizations, and (iii) a move from oxide to low-k dielectrics between the metal interconnects. The dominant electromigration and stress migration failure mechanisms associated with these advanced interconnect structures are typically different from the failure mechanisms associated with standard Al-based interconnects. In this work, physical and statistical models are used in conjunction with reliability data to compare the failure mechanisms in standard, Al-based interconnects with Cu-based, damascene interconnects. Methods are discussed for determining the dominant failure mechanisms and improving reliability in both types of interconnect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 135
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Korhonen, M.A., Borgesen, P., Tu, K.N., and Li, C.-Y., J. Appl. Phys. 73(8):3790–3799, 1993 Google Scholar
2. Lloyd, J.R. and Kitchen, J., J. Appl. Phys. 69(4):2117–2127, 1991 Google Scholar
3. Oates, A.S. and Barr, D.L., J. Electron. Mat. 23(1):62–66, 1994 10.1007/BF02651269Google Scholar
4. Nix, W.D. and Sauter, A.I., 1st Int. Workshop on Str. Ind. Phen. in Met., AVS 13, AIP Conf. Proc. 263Google Scholar
5. Clement, J.J. and Lloyd, J.R., J. Apple. Phys. 71(4):1729–1731, 1992 10.1063/1.351204Google Scholar
6. Blech, I.A., J. Appl. Phys. 47, 1203 (1976)10.1063/1.322842Google Scholar
7. Brown, D.D., Sanchez, J.E. Jr., Pham, V., Besser, P.R., Korhonen, M.A., and Li, C.-Y., Advanced Metallization for Future ULSI, MRS Symp. Proc 427:107–112, 1996 Google Scholar
8. Marieb, T., Abratowski, E., Bravman, J.C., Madden, M., and Flinn, P., Materials Reliability in Microelectronics IV, MRS Symp. Proc. Vol. 338, 1994, p.409 Google Scholar
9. Besser, P.R., Sanchez, J.E. Jr., Field, D.P., Pramanick, S., and Sahota, K.., Materials Reliability in Microelectronics VII, MRS Symp. Proc. Vol. 473, 1997, p. 217 Google Scholar
10. Abe, K., Harada, Y., and Onoda, H., to be presented at International Reliability Physics Symposium (IRPS), 1998 Google Scholar
11. Ryu, C., Loke, A.L.S., Nogami, T., and Wong, S., IRPS 97Google Scholar
12. Strumpf, R. and Scheffler, M., Phys. Rev. Lett. 72(2), 1994 Google Scholar