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Modeling Fermi Level Effects in Atomistic Simulations

Published online by Cambridge University Press:  01 February 2011

Zudian Qin  and
Scott T. Dunham
Zudian Qin
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195
Scott T. Dunham
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195
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Abstract

In this work, variations in electron potential are incorporated into a Kinetic Lattice Monte Carlo (KLMC) simulator and applied to dopant diffusion in silicon. To account for the effect of dopants, the charge redistribution induced by an external point charge immersed in an electron (hole) sea is solved numerically using the quantum perturbation method. The local carrier concentrations are then determined by summing contributions from all ionized dopant atoms and charged point defects, from which the Fermi level of the system is derived by the Boltzmann equation. KLMC simulations with incorporated Fermi level effects are demonstrated for charged point defect concentration as a function of Fermi level, coupled diffusion phenomenon and field effect on doping fluctuations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C3.8
Copyright
Copyright © Materials Research Society 2002

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