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Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon

Published online by Cambridge University Press:  01 February 2011

Taiji Noda ,
Susan Felch ,
Vijay Parihar ,
Christa Vrancken ,
Tom Janssens ,
Hugo Bender  and
Wilfried Vandervorst
Taiji Noda
Affiliation:
[email protected], Matsushita Electric Industrial Co., Ltd., Matsushita assignee at IMEC, SPDT, Kapledreef 75, Leuven, B 3001, Belgium, +32-16-28-1545, +32-16-28-1706
Susan Felch
Affiliation:
[email protected], Appiled Materials, Sunnyvale, CA, 94086, United States
Vijay Parihar
Affiliation:
[email protected], Appiled Materials, Sunnyvale, CA, 94086, United States
Christa Vrancken
Affiliation:
[email protected], IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
[email protected], IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Hugo Bender
Affiliation:
[email protected], IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
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Abstract

Boron diffusion and defect evolution during sub-millisecond (ms) laser annealing with partial SPER are investigated using secondary ion mass spectrometry and transmission electron microscopy. Boron diffusivity enhancement in amorphous-Si is observed during partial SPER at 550 °C. It is shown that boron diffusion during the laser annealing process is a 2-step diffusion (SPER + Laser). The depth of the amorphous layer affects the dopant activation behavior. During sub-ms laser annealing, end-of-range defects are formed and show an evolution behavior. {311} defects cannot completely transfer to dislocation loops after 1300 °C laser annealing. It is considered that the thermal budget of sub-ms laser is too small for full defect evolution. Atomistic diffusion modeling using a kinetic Monte Carlo method can explain the defect behavior during laser annealing.

Keywords

diffusionsecondary ion mass spectroscopy (SIMS)simulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C05-06
Copyright
Copyright © Materials Research Society 2006

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References

1 Ito, T., et al., Symp. VLSI Tech. Dig., p. 53 (2003).Google Scholar
2 Shima, A., et al., Symp. VLSI Tech. Dig., p. 174 (2004).Google Scholar
3 Fung, S. K. H., et al., Symp. VLSI Tech. Dig., p. 92 (2004).Google Scholar
4 Adachi, K., et al., Symp. VLSI Tech. Dig., p. 142 (2005).Google Scholar
5 Jacques, J., et al., Appl. Phys. Lett. 82, 3469 (2003).Google Scholar
6 Jaraiz, M., et al., Mat.Res.Soc.Symp.Proc. 532,43 (1998).Google Scholar
7 Noda, T., J. Appl. Phys. 94, 6396 (2003).Google Scholar