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Modeling 1/f noise using a simple physical model based on vacancy motion*

Published online by Cambridge University Press:  21 February 2011

N. S. Klonais  and
J. G. Cottle
N. S. Klonais
Affiliation:
Departmen of Electrical Engneering, University of South Florida, Tampa, Florida
J. G. Cottle
Affiliation:
Departmen of Electrical Engneering, University of South Florida, Tampa, Florida
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Abstract

A computer model is presented and used to simulate the motion of vacancies in a crystalline lattice. The lattice is modeled as a resistive array connected in series/parallel with vacancies represented as elements of high resistance in the array. Time series and spectra are generated by allowing the vacancies to move and these are consistent with actual waveforms produced by thin metal films. Simulation of temperature change yields dependencies similar to those predicted by Dutta and Horn (1979). By varying the density of vacancies the model predicts a variable Hooge parameter that saturates to a constant beyond a critical value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 321
Copyright
Copyright © Materials Research Society 1993

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Footnotes

*

Supported by Sandia National Laboratories.

References

1. Weissman, M. B., Rev. Mod. Phys. 60, 537 (1988).CrossRefGoogle Scholar
2. Duttan, P. and Horn, P. M., Rev. Mod. Phys. 53,497 (1981).CrossRefGoogle Scholar
3. Eberhard, J. W. and Horn, P. M., Phys. Rev. B, 18, 6681 (1978).CrossRefGoogle Scholar
4. Fleetwood, D. M. and Giordano, N., Phys. Rev. B, 31, 1157 (1984).CrossRefGoogle Scholar
5. Pelz, J. and Clarke, J., Phys. Rev. Lett. 55, 738 (1985).CrossRefGoogle Scholar
6. Black, R. D., Restle, P. J., and Weissman, M. B., Phys. Rev. Lett. 51, 1476 (1983).CrossRefGoogle Scholar
7. Koch, R H., Loyd, J. R., and Cronin, J., Phys. Rev. Lett. 55,2487 (1985).CrossRefGoogle Scholar
8. Scofield, J. H., Mantese, J. V., and Webb, W. W., Phys. Rev. B, 32, 736 (1985).CrossRefGoogle Scholar
9. Kogan, Sh. M and Nagaev, K. E., Soy. Phys. Solid State 24, 1921 (1982).Google Scholar
10. Robinson, F. N. H., Phys. Lett. 97A, 162 (1983).CrossRefGoogle Scholar
11. Pelz, J. and Clarke, J., Phys. Rev. B, 36, 4479 (1987).CrossRefGoogle Scholar
12. Orlov, V. B., Solid State Electronics, 35, 1827 (1992).CrossRefGoogle Scholar
13. Feng, S., Lee, P. A. and Stone, A. D., Phys. Rev. Lett. 56, 1960 (1986).CrossRefGoogle Scholar
14. Hooge, F. N., Physica B, 162 (1990).CrossRefGoogle Scholar