Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-12-01T02:27:00.647Z Has data issue: false hasContentIssue false
  • English
  • Français

Model of Subgrain Structure Formation in HTS Cuprates and Ferropnictides

Published online by Cambridge University Press:  09 August 2012

Constantin G. Tretiatchenko ,
Vassily L. Svetchnikov  and
Harold Wiesmann
Constantin G. Tretiatchenko
Affiliation:
G. V. Kurdyumov Institute for Metal Physics, 36 Vernadsky Blvd., Kyiv 03142, Ukraine
Vassily L. Svetchnikov
Affiliation:
G. V. Kurdyumov Institute for Metal Physics, 36 Vernadsky Blvd., Kyiv 03142, Ukraine
Harold Wiesmann
Affiliation:
Brookhaven National Laboratory, 76 Cornell Avenue, Upton, NY 11973, U.S.A.
Get access

Abstract

We have modified the model of rotational relaxation of stresses at mismatched interface by taking into account elastic strains of the growing film. This extended the model validity range to a wider class of compounds including pnictides. The model describes formation of low angle boundaries consisting of threading edge dislocations. Calculated interface energy shows that rotational relaxation occurs due to finite size of clusters and to non-equilibrium effect of the film growth. Subgrain size and expected angle of domain rotation depending on the lattice mismatch have been estimated. Unusual effect of increasing angle between the film subgrains at reduction of the deposition rate is predicted. The computed parameters of subgrains are consistent with the observed film nanostructure.

Keywords

epitaxynanostructuresimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1434: Symposium I – Recent Advances in Superconductors, Novel Compounds and High-Tc Materials , 2013 , mrss12-1434-i13-04
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pan, V. M., Cherpak, Yu. V., Komashko, V. A., Pozigun, S. A., Tretiatchenko, C. G., Semenov, A. V., Pashitskii, E. A. and Pan, A. V., Phys. Rev. B 73 054508 (2006).Google Scholar
2. Svetchnikov, V., Pan, V., Traeholt, C. and Zandbergen, H., IEEE Trans. Appl. Supercond. 7 1396–1398 (1997).Google Scholar
3. Pan, V. M., Pashitskii, E. A., Ryabchenko, S. M., Komashko, V. A., Pan, A. V., Dou, S. X., Semenov, A. V., Tretiatchenko, C. G. and Fedotov, Yu. V., IEEE Trans. Appl. Supercond., 13 3714–3717 (2003).Google Scholar
4. Svetchnikov, V. L., Zandbergen, H. W. and Pan, V. M., Metallofiz. Nov. Tekh. 26, 725 (2004).Google Scholar
5. Svetchnikov, V. L. and Pan, V. M., Metallofiz. Nov. Tekh. 27 499 (2005).Google Scholar
6. Tretiatchenko, C. G., Flis, V. S., Svetchnikov, V. L. and Pan, V. M., MRS Proceedings 1367 mrss11-1367-vv08-03 (2011).Google Scholar
7. Bhadeshia, H. K. D. H., Worked examples in the geometry of crystals, 2 nd ed. (Institute of Materials, London, 2001 (updated 2006)) p. 76.Google Scholar