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A Model for the Frequency Dependence of Charge Pumping Current in Polycrystalline Silicon Thin Film Transistor

Published online by Cambridge University Press:  26 February 2011

Ga-Won Lee ,
Jung-Yeal Lee ,
Deuk-Sung Choi ,
Sung-Hoi Hur ,
Choong-Ki Kim  and
Chul-Hi Han
Ga-Won Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Jung-Yeal Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Deuk-Sung Choi
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Sung-Hoi Hur
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Choong-Ki Kim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Chul-Hi Han
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
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Abstract

Making a comparative study between MOSFET and polycrystalline silicon thin film transistor(poly-Si TFT) in applying the charge pumping method(CPM), the most distinctive difference was found in the relation of the charge pumping current(Icp) versus the gate pulse frequency. According to the conventional theory, Icp increases linearly with the gate pulse frequency. In poly-Si TFT, however, Icp shows complicated dependence on frequency. We modeled the frequency dependence of Icp in poly-Si TFT by considering the resistance of active poly-Si film. According to this model we can extract the parameters such as grain boundary trap density, substrate resistance, and capture cross section.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 761
Copyright
Copyright © Materials Research Society 1995

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