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A Model for Laser Beam Induced Solid-State Crystal Growth in Silicon On Sapphire

Published online by Cambridge University Press:  15 February 2011

M. L. Burgener ,
R. E. Reedy  and
O. Csanadi
M. L. Burgener
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
R. E. Reedy
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
O. Csanadi
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
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Abstract

An analytic model is presented for laser beam induced solid-state crystal growth in silicon on sapphire. The model, which assumes a single activation energy, utilizes temperature profiles calculated from a Green's function solution to the heat equation. Calculated crystal growth in silicon on sapphire is compared to experimentally measured values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 495
Copyright
Copyright © Materials Research Society 1982

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References

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