Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-27T03:10:19.805Z Has data issue: false hasContentIssue false
  • English
  • Français

A Model for Comprehensive Studies of Porosity in Mesoporous Low-K Dielectrics

Published online by Cambridge University Press:  01 February 2011

Mihail P. Petkov
Mihail P. Petkov*
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109, U.S.A.
Get access

Abstract

The successful integration of a porous low dielectric constant (k) material as an interlevel dielectric depends on the morphology of the embedded porosity. Simple site percolation models are utilized here to investigate porosity properties of low-k dielectrics with respect to the current technology trends. Significant differences between two generations of porous dielectrics, k < 2.4 and k < 2.1, are found. The porosity fraction in the latter is above the percolation threshold, which may have serious impact on the materials physical properties and its compatibility with production steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 731: Symposium W – Modeling and Numerical Simulation of Materials Behavior and Evolution , 2002 , W5.20
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Peters, L., “Industry divides on low-k dielectric choices”, Semiconductor International, May 2001.Google Scholar
2. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2001 Edition, (http://public.itrs.net/Files/2001ITRS/Home.htm).Google Scholar
3. Stauffer, D. and Aharony, A., Introduction to Percolation Theory, (Taylor and Francis, London, (1994).Google Scholar
4. Isichenko, M.B., Rev. Mod. Phys. 64, 961 (1992); and references therein.Google Scholar
5. Sahimi, M., Applications of Percolation Theory, (Taylor & Francis, London, 1994).Google Scholar
6. Jan, N., Physica A 266, 72 (1999).Google Scholar
7. Scher, H. and Zallen, R., J. Chem. Phys. 53, 3759 (1979).Google Scholar
8. Bernal, J.D., Nature 185, 68 (1960).Google Scholar
9. Powell, M.J., Phys. Rev. B 21, 3725 (1980).Google Scholar
10. Ahmadzadeh, M. and Simpson, A.W., Phys. Rev. B 25, 4633 (1982).Google Scholar
11. Bug, A.L.R., Safran, S.A., Crest, G.S., and type="authors">Webman, I., Phys. Rev. Lett. 55, 1896 (1985).Webman,+I.,+Phys.+Rev.+Lett.+55,+1896+(1985).>Google Scholar
12. Bentz, D.P., Garboczi, E.J., and type="authors">Snyder, K.A., “A hard core/soft shell microstructural model for studying percolation and transport in three-dimensional composite media”, NISTIR 6265, U.S. Department of Commerce, 1999.Snyder,+K.A.,+“A+hard+core/soft+shell+microstructural+model+for+studying+percolation+and+transport+in+three-dimensional+composite+media”,+NISTIR+6265,+U.S.+Department+of+Commerce,+1999.>Google Scholar
13. “IBM perfects new technique for making high-performance microchips”, East Fishkill, NY, April 3, 2000 (Cu-11 process).Google Scholar
14. Miller, R.D., Reports on Dow/IBM NIST-ATP project 98-06-0052: “Ultra-Low Dielectric Constant Materials for Integrated Circuit Interconnects” (unpublished).Google Scholar
15. Hawker, C.J., Hedrick, J.L, Miller, R.D., and type="authors">Volksen, W., MRS Bulletin, April 2000, p. 54.Volksen,+W.,+MRS+Bulletin,+April+2000,+p.+54.>Google Scholar