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Mocvd Growth Of Single Crystal Znsxsel−x On Si

Published online by Cambridge University Press:  28 February 2011

Patricia A. Sekula ,
Stanley M. Vernon  and
Chris J. Keavney
Patricia A. Sekula
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Stanley M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Chris J. Keavney
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

Single crystal ZnSxSel−x films have been grown for the first time on (111) Si substrates by low-pressure MOCVD. The epitaxial films clearly show a passivating effect on silicon solar cells, and act as antireflective coatings. Attempts at incorporating Al as an n-type dopant were unsuccessful as the films remain semi-insulating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 405
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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