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Misfit Dislocations and Elastic Relaxation

Published online by Cambridge University Press:  21 February 2011

H.P Strunk ,
S. Christiansen  and
M. Albrecht
H.P Strunk
Affiliation:
Institut für Werkstoffwissenschaften, Lehrstuhl Mikrocharakterisierung, Universität Erlangen, Germany, [email protected]
S. Christiansen
Affiliation:
Institut für Werkstoffwissenschaften, Lehrstuhl Mikrocharakterisierung, Universität Erlangen, Germany, [email protected]
M. Albrecht
Affiliation:
Institut für Werkstoffwissenschaften, Lehrstuhl Mikrocharakterisierung, Universität Erlangen, Germany, [email protected]
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Abstract

Prior to relaxation of misfit strain by formation of misfit dislocations, a growing heteroepitaxial layer can relax elastically by forming surface undulations called ripples. With increasing amplitude of the ripples the misfit strain and thus stress fields grow markedly inhomogeneous, and dislocation formation may thus be triggered in areas of maximum shear stress. The surface directly above such a new dislocation then represents a band of preferential growth and develops into a ridge, which in turn redistributes the strain in the growing layer. This interwoven elastic/plastic relaxation mechanism can comparably easily be deduced from transmission electron and atomic force microscopy studies of SiGe layers grown onto silicon by liquid phase epitaxy. This growth technique exerts only very small driving forces and thus operates very near thermodynamical equilibrium. The local strain tensor and strain energy density are calculated for the actual layer geometries by three dimensional finite element method and provide for quantification of the mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 313
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Matthews, J.W., in Epitaxial Growth, Vol. B, edited by Matthews, J.W. (Academic Press, New York, 1975) p.559 Google Scholar
2 Asaro, R.J. and Tiller, W.A., Metall. Trans 3, 1789 (1972)Google Scholar
3 Mullins, W.W. and Sekerka, R.F., J. Appl. Phys. 28, 333 (1957)Google Scholar
4 Mullins, W.W. and Sekerka, R.F., J. Appl. Phys. 35, 444 (1964)Google Scholar
5 Grinfeld, M.A., Sov. Phys. Dokl. 31, 831 (1986)Google Scholar
6 Cullis, A.G., Robbins, D.J., Pidduck, A.J. and Smith, P.W., in Microscopy of Semiconducting Materials 1991, (Inst. Phys. Conf. Ser. 117; edited by Cullis, A.G. and Long, N.J., Institute of Physics, Bristol 1991) p. 439; J. Crystal Growth 123, 333 (1992)Google Scholar
7 Jesson, D.E., Pennycook, S.J., Baribeau, J.-M. and Houghton, D.C., Phys. Rev. Lett. 71, 1744 (1993)Google Scholar
8 Cullis, A.G., Pidduck, A.J. and Emeny, M.T., Phys. Rev. Lett. 75, 2368 (1995)Google Scholar
9 Albrecht, M., Christiansen, S., Michler, J., Dorsch, W., Strunk, H.P., Hansson, P.O. and Bauser, E., Appl. Phys. Lett. 67, 1232 (1995)Google Scholar
10 LeGoues, F.K., Reuter, M.C., Tersoff, J., Hammar, M. and Tromp, R.M., Phys. Rev. Lett. 73, 300 (1994)Google Scholar
11 Rocher, A. and Raisin, C., in Polycrystalline Semiconductors II, edited by Werner, J.H. and Strunk, H.P. (Springer, Heidelberg, New York, 1991), p. 483 Google Scholar
12 Albrecht, M., Strunk, H.P., Hull, R., Bonar, J.M., Appl. Phys. Lett. 62, 2206 (1993)Google Scholar
13 Srolovitz, D.J., Acta metall 37, 621 (1989)Google Scholar
14 Gao, H., J. Mech. Phys. Solids 39, 443 (1991)Google Scholar
15 Freund, L.B. and Jonsdottir, F., J. Mech. Phys. Solids 41, 1245 (1993)Google Scholar
16 Grilhé, J., Acta metall. mater. 41, 909 (1993)Google Scholar
17 Spencer, B.J., Voorhees, P.W. and Davis, S.H., J. Appl. Phys. 73, 4955 (1993)Google Scholar
18 Spencer, B.J. and Meiron, D.I., Acta metall. mater. 42, 3629 (1994)Google Scholar
19 Junqua, N. and Grilhé, J., Mat. Sci. Engg. A 173, 29 (1993)Google Scholar
20 Li, J., Chin, C.-h. and Gao, H., in Mechanisms of Thin Film Evolution, edited by Yatisove, S.M., Thompson, C.V. and Eaglesham, D.J. (Mat. Res. Soc. Symp. Proc. 317, Pittsburgh, PA, 1994), p. 303 Google Scholar
21 Jonsdottir, F. and Freund, L.B., in Mechanisms of Thin Film Evolution, edited by Yatisove, S.M., Thompson, C.V. and Eaglesham, D.J. (Mat. Res. Soc. Symp. Proc. 317, Pittsburgh, PA, 1994), p. 309Google Scholar
22 Jesson, D.E., Pennycook, S.J., Baribeau, J.-M. and Houghton, D.C., Scanning Microscopy 8, 849 (1994)Google Scholar
23 Gao, H., J. Mech. Phys. Solids 42, 741 (1994)Google Scholar
24 Marek, T., Strunk, H.P., Weishart, H. and Bauser, E., J. Crystal Growth 134, 14 (1993)Google Scholar
25 Hansson, P.O., Werner, J.H., Tapfer, L., Tilly, L.P. and Bauser, E., J. Appl. Phys. 68, 2158 (1990)Google Scholar
26 Bauser, E., Schweitzer, G., Strunk, H.P. and Traxler, A., in Magnetic Bearings, edited by Schweitzer, G. (Springer, Berlin, Heidelberg, New York, 1988), p. 59.Google Scholar
27 Dorsch, W., Christiansen, S., Albrecht, M., Strunk, H.P., Hansson, P.O. and Bauser, E., Surf. Sci. 331–333 896, (1995)Google Scholar
28Landolt-Börnstein, new Series 17a to 17d (Springer, Berlin, 1982)Google Scholar
29 Christiansen, S., Albrecht, M., Michler, J. and Strunk, H.P., phys. stat. sol, submittedGoogle Scholar
30 Albrecht, M., Christiansen, S., Hansson, P.O., Michler, J., Strunk, H.P. and Bauser, E., in Microscopy of Semiconducting Materials 1995 (Institute of Physics, Bristol) to be publishedGoogle Scholar
31 Jonsdottir, F. and Freund, L.B., Mech. Mat. 20, 337 (1995)Google Scholar
32 Freund, L.B., Beltz, G.E. and Jonsdottir, F., in Stresses and Mechanical Properties IV, edited by Townsend, P.H., Sanchez, J., Li, C-Y. and Weihs, T.P. (Mater. Res. Soc. Symp. Proc. 308, Pittsburgh, PA, 1993), p. 308 Google Scholar
33 Hagen, W. and Strunk, H.P., Appl. Phys. 17, 85 (1978)Google Scholar
34 Albrecht, M., Christiansen, S. and Strunk, H.P., phys. stat. sol. 150, 453 (1995)Google Scholar
35 Albrecht, M., Hansson, P.O., Christiansen, S., Dorsch, W., Strunk, H.P. and Bauser, E., Scanning Microscopy 8, 925 (1994)Google Scholar
36 Christiansen, S., Albrecht, M. and Strunk, H.P., Computational Materials Science, submittedGoogle Scholar
37 Xie, Qianghua, Kobayashi, N.P., Ramachandran, T.R., Kalburge, A., Chen, P. and Madhukar, A., J. Vac. Sci. Tech B, to appear; also cited by R.A. Metzger, Compound Semiconductor 1 (3), 37 (1995)Google Scholar