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Millisecond-annealing using flash lamps for improved performance of AZO layers

Published online by Cambridge University Press:  22 September 2011

T. Gebel ,
M. Neubert ,
R. Endler ,
J. Weber ,
M. Vinnichenko ,
A. Kolitsch ,
W. Skorupa  and
H. Liepack
T. Gebel
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
M. Neubert
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
R. Endler
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
J. Weber
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
M. Vinnichenko
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
A. Kolitsch
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
W. Skorupa
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
H. Liepack
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
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Abstract

ZnO:Al films with a thickness of about 880nm were deposited by magnetron sputtering. The glass substrate was not heated neither before during nor after the deposition. Subsequently the deposited layers were treated by flash lamp annealing (FLA) at 1.3 ms. Using this method, the resistivity of the ZnO:Al films was decreased by a factor of two, down to 1.0 x 10-3 Ωcm. These results are in good agreement with results reported from rapid thermal processing or furnace annealing treatments. Despite the very short annealing time of only 1.3 ms not only the resistivity but also the transmittance in the UV and the blue range were considerably improved.

Keywords

annealingtransparent conductorsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f10-10
Copyright
Copyright © Materials Research Society 2011

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References

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