Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T22:44:27.879Z Has data issue: false hasContentIssue false
  • English
  • Français

Microwave Separation Measurements of Bulk Lifetime and Surface Recombination Velocities in Si Wafers with Various Surface Properties

Published online by Cambridge University Press:  10 February 2011

Y. Ogita ,
M. Minegishi ,
H. Higuma ,
M. Shigeto  and
K. Yakushiji
Y. Ogita
Affiliation:
Dept. of Electrical & Electronic Engineering, Kanagawa Institute of Technology, Atsugi, Kanagawa, 243-02 Japan
M. Minegishi
Affiliation:
Dept. of Electrical & Electronic Engineering, Kanagawa Institute of Technology, Atsugi, Kanagawa, 243-02 Japan
H. Higuma
Affiliation:
Dept. of Electrical & Electronic Engineering, Kanagawa Institute of Technology, Atsugi, Kanagawa, 243-02 Japan
M. Shigeto
Affiliation:
Showa Denko K.K., Chichibu, Saitama, 369-18, Japan
K. Yakushiji
Affiliation:
Showa Denko K.K., Chichibu, Saitama, 369-18, Japan
Get access

Abstract

The separation measurements of a bulk lifetime υo, front and back surface recombination velocities S0, Sw have been investigated for both 620 μm and 1.08 mm thick Si wafers with various surface treatments. The separation was made by applying bisurface photocoductivity decay method to the photoconductivity decay curves measured by 500 MHz microwave reflection under the bias light illumination. The bulk lifetime and the surface recombination velocities have been determined, respectively, to be 624–659 μs and 18.4–66.1 cm/s for the oxidized sliced-surface and 6285 cm/s for the sliced surface. And they have been also determined, respectively, to be 412–422 μs and <1 cm/s for the oxidized mirror polished-surface or the oxidized etched surface, 565–626 μs and 1042–1112 cm/s for the oxidized sandblasted-surface. The noncontact microwave BSPCD method with bias lights makes it possible to determine separately the bulk lifetime and surface recombination velocities in the front surface and backsurface in Si wafers with the wafer thickness for the practical use.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996 , 79
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Abe, T., Itoh, T., Hayamizu, Y., Sunagawa, K., Yokota, S., and Yamagishi, H. in Defect Control in Semiconductors edited by Sumino, K. (NORTH-HOLLAND, Vol. 1, Amsterdam, 1990), p. 297 Google Scholar
2. Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N., and Shiraiwa, T., Jpn. J. Appl. Phys., 27, L2361 (1988 Google Scholar
3. Ogita, Y., J. Appl. Phys., 79, 9 (May 1, 1996) in printGoogle Scholar
4. Ogita, Y. in Extended Abstracts of The 177th Society Meeting, (The Electrochemical Society, 90-1, Pennington, NJ, 1990), p. 702 Google Scholar
5. Daio, H., Uematsu, Y., and Ogita, Y. in Extended Abstracts of the 42th Spring Meeting. The Japan Society of Applied Physics and Related Society (The Japan Society of Applied Physics, No. 2, Tokyo, 1995), p. 834 (31a-H-7)Google Scholar