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Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

Published online by Cambridge University Press:  26 February 2011

YauYau Tse ,
P. S. Suherman ,
T. J. Jackson  and
I. P. Jones
YauYau Tse
Affiliation:
y.y.tse@bham.ac.uk, University of Birmingham, Metallurgy and Materials, Department of Metallurgy and Materials, School of Engineering, University of Birmingham, Birmingham, N/A, B15 2TT, United Kingdom, 44 (0)121 4146731, 44 (0)121 414 5232 (shared)
P. S. Suherman
Affiliation:
p.s.suherman@bham.ac.uk
T. J. Jackson
Affiliation:
t.j.jackson@bham.ac.uk
I. P. Jones
Affiliation:
i.p.jones@bham.ac.uk
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Abstract

Ba0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

Keywords

transmission electron microscopy (TEM)microstructuredielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-25
Copyright
Copyright © Materials Research Society 2006

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References

[1] Im, J., Auciello, O., Baumann, P. K., Streiffer, S. K., Kaufman, D. Y., Krauss, A. R., Appl. Phys. Letters, 76, 625 (2000).Google Scholar
[2] Hyun, S., Lee, J. H., Kim, S. S., Char, K., Sok, S. J., and Lee, E. H., Appl. Phys. Letters, 77, 3084 (2000).Google Scholar
[3] Jia, Q. X., Findikoglu, A. T., Reagor, D. and Lu, P., Appl. Phys. Letters, 73, 897 (1998).Google Scholar
[4] Venkatesan, T., Wu, X. D., Inam, A. and Wachtman, J. B., Appl. Phys. Letters, 52, 1193 (1988).Google Scholar
[5] Suzuki, T., Nishi, Y. and Fujimoto, M., Phil. Magazine A, 79, 2461, (1999).Google Scholar
[6] Ayache, J., Albarède, P. H., Ultramicroscopy, 60, 195–206 (1995).Google Scholar
[7] Suherman, P.M., Jackson, T.J., Koutsonas, Y., Radoslav, R.A., and Lancaster, M.J., Int. Ferroelectrics, 61, 133, (2004).Google Scholar
[8] Suherman, P.M., Jackson, T.J., Koutsonas, Y., Radoslav, R.A., and Lancaster, M.J., IEEE Microwave Theory and Techniques – Symposium Digest, 265–268 (2004).Google Scholar
[9] Strikovsky, M. D., Klyuenkov, E. B., Gaponov, S. V., Schubert, J. and Copetti, C. A. Appl. Phys. Lett. 63 1146 (1993)Google Scholar
[10] Lu, C. J., Bendersky, L. A., Chang, K., Takeuchi, I., J. Appl. Physics 93, 512, (2003)Google Scholar