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Microwave Growth of ZnO Bulk Crystals

Published online by Cambridge University Press:  01 February 2011

Jiping Cheng ,
Yunjin Zhang  and
Ruyan Guo
Jiping Cheng
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, 129A MRL, University Park, PA, 16802, United States, (814) 865-4571, (814) 865-2326
Yunjin Zhang
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, University Park, PA, 16802, United States
Ruyan Guo
Affiliation:
[email protected], The University of Texas at San Antonio, Department of Electrical and Computer Engineering, San Antonio, TX, 78249, United States
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Abstract

A novel approach for fabricating ZnO crystals using self-encapsulated microwave melt growth technique is developed, which permits idealized temperature profile for the nucleation of the ZnO crystals and their growth in a contamination-free environment. This paper reports that both un-doped ZnO and p-type doped ZnO (by P or Li:N doping) single crystals were successfully fabricated by this technique. The as-grown ZnO crystals were of light brown to clear in color depending on processing conditions. Their transparency and colorless form were restored after post-growth annealing in oxygen.

Keywords

crystal growthmicrowave heatingZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L04-04
Copyright
Copyright © Materials Research Society 2008

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References

1. Klingshirm, C., Hauschild, R., Priller, H., Decker, M., Zeller, J., and Kalt, H., Supperlattices and Microstructures 38, 209–222 (2005)10.1016/j.spmi.2005.07.003Google Scholar
2. Izyumskaya, N., Avrutin, V., Ozgur, U., Alivov, Y.I., and Morkoc, H., Phys. Stat. Sol. (b) 244, 1439–1450 (2007)10.1002/pssb.200675101Google Scholar
3. Klingshirm, , Chem. Phys. Chem., 8, 783–803 (2007)Google Scholar
4. Look, D.C., in Zinc Oxide Materials and Devices II, edited by Teherani, Ferechteh Hosseini and Litton, Cole W., Proc. of SPIE, Vol. 6474, 647402–1 (2007)Google Scholar
5. Ambracher, O., J. Phys. D31, 2653–2710 (1998)Google Scholar
6. Kunihito, O., Hajime, S., and Satoshi, K., J. Cryst. Growth 237/239, 509–513 (2002)Google Scholar
7. Li, X., Xu, J., Jin, M., Wu, X., Qian, G., and Li, X., Cryst. Res. Technol. 42, 221–216 (2007)10.1002/crat.200610803Google Scholar
8. Sekiguchi, T., Miyashita, S., Obara, K., Shishido, T., and Sakagami, N., J. Cryst. Growth 214/215, 72–76 (2000)10.1016/S0022-0248(00)00065-8Google Scholar
9. Maeda, K., Sato, M., Niikura, I., and Fukuda, T., Semicond. Sci. Technol. 20, S49–54 (2005)10.1088/0268-1242/20/4/006Google Scholar
10. Ntep, J.-M., Hassani, S. Said, Lusson, A., Tromson-Carli, A., Ballutaud, D., Didier, G., and Triboulet, R., J. Cryst. Growth 207, 30–34 (1999)Google Scholar
11. , Mycielski, Kowalczyk, L., Szadkowski, A., Chwalisz, B., Wysmolek, A., Stepniewski, R., Baranowski, J.M., Potemski, M., Witowski, A., Jakiela, R., Barcz, A., Witkowswa, B., Kaliszek, W., Jedrzejczak, A., Suchocki, A., Lusakowska, E., and Kaminska, E., J. Alloys Compounds 371, 150–152 (2004)10.1016/j.jallcom.2003.08.106Google Scholar
12. , Nause, and Nemeth, B., Semicond. Sci. Technol. 20, S45–48 (2005)10.1088/0268-1242/20/4/005Google Scholar
13. Schulz, D., Ganschow, S., Klimm, D., Neubert, M., Robberg, M., Schmidbauer, M., and Fornari, R., J. Cryst. Growth 296, 27–30 (2007)10.1016/j.jcrysgro.2006.08.012Google Scholar
14. Cheng, J., Guo, R., and Wang, Q-M., Appl. Phys. Lett. 85 (22), 5140–5142 (2004)10.1063/1.1825067Google Scholar
15. Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., and Steiner, T., J. Vac. Sci. Technol. B22, 932–948 (2004)Google Scholar
16. Look, D.C, and Claflin, B., Phys. Stat. Sol. (b)241, 624–630 (2004)Google Scholar
17. Orlinskii, S.N., Schmidt, J., baranov, P.G., and Hofmann, D.M., Phys. Rev. Lett. 92, 047603 (2004)10.1103/PhysRevLett.92.047603Google Scholar
18. Lu, J.G., Zhang, T.Z., Ye, Z.Z., Zhu, L.P., Wang, L., Zhan, B.h., and Liang, Q.L., Appl. Phys. Lett. 88, 222114 (2006)10.1063/1.2209191Google Scholar