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Microstructure of Nonpolar a-Plane GaN Grown on (1120) 4H-SiC Investigated by TEM.

Published online by Cambridge University Press:  01 February 2011

D. N. Zakharov ,
Z. Liliental-Weber ,
B. Wagner ,
Z. J. Reitmeier ,
E. A. Preble  and
R. F. Davis
D. N. Zakharov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62–203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62–203, Berkeley, CA 94720
B. Wagner
Affiliation:
North Carolina State University, Raleigh, NC 27695
Z. J. Reitmeier
Affiliation:
North Carolina State University, Raleigh, NC 27695
E. A. Preble
Affiliation:
North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
North Carolina State University, Raleigh, NC 27695
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Abstract

Plan-view and cross-section samples of (1120) (a-plane) GaN grown on 4H-SiC substrates with AlN buffer layers were studied by transmission electron microscopy. Samples reveal the presence of a high density of stacking faults formed on the basal plane of hexagonal GaN. These stacking faults, terminated in the growth plane by threading dislocations, nucleate at the AlN/4H-SiC interface and propagate to the GaN layer surface. High resolution electron microscopy shows that the majority of stacking faults are low-energy planar defects of the type I1 and I2. High energy stacking faults (E) are not observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.28
Copyright
Copyright © Materials Research Society 2004

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References

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