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Microstructure Control in Mocvd PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

Daesig Kim ,
Tae-Young Kim ,
June Key Lee ,
W. Tao  and
Seshu B. Desu
Daesig Kim
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440–600 Korea
Tae-Young Kim
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440–600 Korea
June Key Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440–600 Korea
W. Tao
Affiliation:
Department of Materials Science Engineering, VA Tech., Blacksburg, VA 24061
Seshu B. Desu
Affiliation:
Department of Materials Science Engineering, VA Tech., Blacksburg, VA 24061
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Abstract

It was shown that Pb(ZrxTi1−x)O3 thin films (PZT) can be successfully deposited by metalorganic chemical vapor deposition (MOCVD) in a wide deposition temperature range starting from 400°C to 600°C. Variations in texture, morphology and grain size of the films as a function of process parameters were systematically investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The deposition temperature and gas composition in the reactor are the two key parameters that control the film microstructure. The accompanying changes in the ferroelectric properties with respect to the variations of the process parameters will also investigated. In addition, we found an interrelationship between the grain orientation and surface roughness of the films. Films with (111) preferred orientation are significantly smoother than the films with other preferred orientations. We also demonstrate, for the first time, fine grained PZT films with very low surface roughness, which show excellent electrical properties can be obtained by lowering the deposition temperature (e.g. 430°C)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 213
Copyright
Copyright © Materials Research Society 1996

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References

1. Dormans, I.G.J.M, Larsen, P.K., Spierings, G.A.C.M., Dikken, J., Ulenaers, M.J.E., Cuppens, R., Taylor, D.J. and Verhaar, R.D.J., Integrated Ferroelectrics, Vol.6 (1995) 93 Google Scholar
2. Chien Peng, H. and Seshu Desu, B., J.Am. Ceram. Soc. Vol.77. (1994) 929.Google Scholar
3. Keijer, M. De, Veldhoven, P.J. De, and Dormans, G.J.M.,.Vol. 310 (1993) 223 Google Scholar
4. Shiosaki, T., Fujimoto, M., Shimizu, M., Fkagawa, M. and Nakaya, K., Integrated Ferroelectrics, Vol.5 (1994) 39 Google Scholar
5. Funakubo, H., Imashit, K., Matsuyama, K., Shinozaki, K. and Mizutani, N., J. of the Ceramic Society of Japan, 102 (1994) 795 Google Scholar
6. Shimizu, M, Hyodo, S., Fujisawa, H., Niu, H. and Shiosaki, T., Mat.Res.Soc.Symp.Proc. (1996), to be publishedGoogle Scholar
7. Chung, Ilsub, Lee, J.K., Yoo, I.K. and Desu, S.B., International Ferroelectrics Vol.10 (1995) 99 Google Scholar
8. Choi, J.H. and Kim, H.K., J.Appl.Phys. 74 (1993) 6413 Google Scholar
9. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T, Jpn. J. Appl. Pysc. Vol.33 (1994) 5167.Google Scholar