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Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer  and
H.F.W. Dekkers
Wolfhard Beyer
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, Institut für Photovoltaik, Leo-Brandt-Strasse, Jülich, N/A, D-52425, Germany, 492461613925, 492461613735
H.F.W. Dekkers
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
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Abstract

The microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.

Keywords

microstructureSinitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A06-05
Copyright
Copyright © Materials Research Society 2006

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References

1. Jiang, F., Stavola, M., Rohatgi, A., Kim, D., Holt, J., Atwater, H., Kalejs, J., Appl. Phys. Lett. 83, 931 (2003).Google Scholar
2. Sopori, B.L., Zhang, Y., and Reedy, R., Proceed. 29th IEEE Photovoltaic Solar Energy Conference, 19-24 May 2002, New Orleans (IEEE, Piscataway, 2002) p. 222.Google Scholar
3. Beyer, W., in: Tetrahedrally-Bonded Amorphous Semiconductors, ed. Adler, D. and Fritzsche, H. (Plenum, New York, 1986) p. 129.Google Scholar
4. Beyer, W. and Mell, H., in: Disordered Semiconductors, ed. Kastner, M.A., Thomas, G.A. and Ovshinsky, S.R. (Plenum, New York, 1987) p. 641.Google Scholar
5. Beyer, W., Physica B 170, 105 (1991).Google Scholar
6. Dekkers, H.F.W., Carnel, L., Beaucarne, G., and Beyer, W., Proceed. 20th European Photovoltaic Solar Energy Conference, 6-10 June 2005, Barcelona (WIP-Renewable Energies, 2005) p. 721.Google Scholar
7. Beyer, W., Physica stat. sol. (c) 1, 1144 (2004).Google Scholar
8. Beyer, W., Herion, J., Wagner, H. and Zastrow, U., Philos. Mag. B 63, 269 (1991).Google Scholar
9. Beyer, W., Herion, J., Wagner, H. and Zastrow, U., MRS Symp. Proc. 219, 81 (1991).Google Scholar
10. Bik, W.M. Arnold, Linnsen, R.N.H., Habraken, F.H.P.M., and Weg, W.F. van der, Appl. Phys. Lett. 56, 2530 (1990).Google Scholar