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Microstructure and Interfacial Properties of Laterally Oxidized AlxGa1-xAs

Published online by Cambridge University Press:  03 September 2012

R.D. Twesten ,
D. M. Follstaedt  and
K. D. Choquette
R.D. Twesten
Affiliation:
Sandia National Laboratories, Albuquerque, NM. 87185-1056, [email protected].
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM. 87185-1056, [email protected].
K. D. Choquette
Affiliation:
Sandia National Laboratories, Albuquerque, NM. 87185-1056, [email protected].
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Abstract

The oxidation of high Al content AlxGa1-xAs has received much attention due to its use in oxide-aperture, vertical-cavity surface emitting lasers (VCSELs) and for passivating AlAs against environmental degradation. We have recently identified the spinel, gamma phase of Al2O3 in layers laterally oxidized in steam at 450°C for =0.98 & 0.92 and have seen evidence for an amorphous precursor to the gamma phase. At the interface with the unoxidized AlxGa1-xAs , an ~17nm amorphous phase remains which could account for the excellent electrical properties of oxide-confined VCSELs and help reduce stress concentrations at the oxide terminus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 291
Copyright
Copyright © Materials Research Society 1997

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