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Microstructure and Electronic Properties of Thin Film Nanoporous Silica as a Function of Processing and Annealing Methods

Published online by Cambridge University Press:  17 March 2011

Christine Caragianis-Broadbridge ,
John R. Miecznikowski ,
Wenjuan Zhu ,
Zhijiong Luo ,
Jin-ping Han  and
Ann Hein Lehman
Christine Caragianis-Broadbridge
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106 Visiting Fellow, Yale University
John R. Miecznikowski
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106
Wenjuan Zhu
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Zhijiong Luo
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Jin-ping Han
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Ann Hein Lehman
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106
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Abstract

Alcogels, aerogel precursors, were prepared by hydrolysis and condensation of the metal alkoxide tetraethylorthosilicate and were catalyzed by both acids and bases, according to a standard reaction. Alcogel solution was spin coated onto p-type silicon wafers and fluid extraction was achieved in an uncontrolled (room temperature, atmospheric pressure) environment. Film porosity was retained through surface modification and/or low vapor pressure solvent techniques. The microstructure and electronic properties of the resulting films were evaluated using non-contact atomic force microscopy (nc-AFM), cross sectional scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Metal insulator semiconductor (MIS) devices were prepared and current-voltage and capacitance-voltage measurements were obtained from these devices. Annealing studies reveal a dramatic temperature dependent effect on both the microstructure and electronic properties of the porous silica films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.16.1
Copyright
Copyright © Materials Research Society 2000

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References

[1]. Smith, D.M., Ackerman, W. C., U. S. Patent No. 5 736 425 (1998).Google Scholar
[2]. Yang, H -S., Choi, S -Y., Hyun, S -H., Park, C -G., Thin Solid Films, 348, 69–73 (1999).10.1016/S0040-6090(99)00016-4Google Scholar
[3]. Nitta, S., Pisupatti, V., Jain, A., Wayner, P., Gill, W., Plawsky, J., J. Vac. Sci. Technol. B., 17(1), 205–212 (1999).10.1116/1.590541Google Scholar
[4]. Yang, H –S., Choi, S –Y., Hyun, S –H., Park, H –H., Hong, J –K., J. Non-Crystalline Solids, 221, 151–156 (1997).10.1016/S0022-3093(97)00335-9Google Scholar
[5]. Mezza, P., Phalippou, J., Sempere, R., J. Non-Crystalline Solids, 243, 75–79 (1999).10.1016/S0022-3093(98)00825-4Google Scholar
[6]. Prakash, S., Brinker, C., Hurd, A., J. Non-Crystalline Solids, 190, 264–275 (1995).10.1016/0022-3093(95)00024-0Google Scholar
[7] Young, R. J. et al. in Specimen Preparation for Transmission Electron Microscopy of Materials – II, edited by Anderson, R.. (Mater. Res. Soc. Proc. 199, Pittsburgh, PA), pp.205–216.Google Scholar
[8] Keller, D., Surface Science, 253, 353–364 (1991).10.1016/0039-6028(91)90606-SGoogle Scholar