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Published online by Cambridge University Press: 15 February 2011
The evolution of the microstructure of submicron Al (.5wt%Cu) lines has been examined as a function of annealing and electromigration stressing time. We have studied lines of two different thicknesses (4000 and 2000 Å) and a range of widths from 0.2 to 1.0 Μm. Pre- and post- stressing studies of the microstructure have been performed, as well as real-time studies during stressing inside the transmission electron Microscope (TEM). We report the results of temperature cyclings over the range 400–525 C for both passivateci and unpassivated lines. IMprovements in the microstructure were observed in all cases. The Most dramatic improvement occurred for the unpassivated lines when annealed to 450 C and for the passivated lines upon annealing to 525 C. In both cases a true bamboo structure was very nearly achieved for lines of width ≤0.5 Μm. Grain growth was by far the greatest in the pads. In the 2000 Å thick passivated lines, voiding upon temperature cycling is more pronounced than for the thicker lines. Also, the bamboo microstructure is more difficult to obtain compared to the 4000 Å lines. Finally, we report our preliminary results on the microstructural changes which occur as a result of electromigration. Voiding and hillock formation are examined. Microstructure is correlated with electromigration reliability.