Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T21:21:24.158Z Has data issue: false hasContentIssue false

Microstructural Observations of LPCVD Double Layer Polysilicon Thin Film Tensile Specimens

Published online by Cambridge University Press:  10 February 2011

M. Legros
Affiliation:
Department of Mechanical Engineering, The Johns Hopkins University, Baltimore, MD 21218–2686.
M. Kumar
Affiliation:
Department of Mechanical Engineering, The Johns Hopkins University, Baltimore, MD 21218–2686.
S. Jayaraman
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218–2686.
K. J. Hemker
Affiliation:
Department of Mechanical Engineering, The Johns Hopkins University, Baltimore, MD 21218–2686.
W. N. Sharpe Jr
Affiliation:
Department of Mechanical Engineering, The Johns Hopkins University, Baltimore, MD 21218–2686.
Get access

Abstract

The vast majority of micro electro-mechanical systems fabricated today depend on polycrystalline silicon thin films for structural support. Studies involving the mechanical performance of these thin films have progressed to the point where the elastic properties and tensile strength of the films can routinely be measured using a specially designed microsample tensile testing machine. However, a fundamental understanding to predict the mechanical behavior of the polycrystalline silicon films requires that these experimental measurements be complemented with detailed observations of the underlying thin film microstructure. This paper describes some of the plan view and cross-section transmission electron microscope observations that have been performed on different deposition runs of double layer polycrystalline films obtained from the Microelectronics Center of North Carolina. The emphasis has been placed on determining the flatness and dimensions of the polycrystalline films, grain morphology and distribution, texture, and dislocation substructure and microtwinning in the undeformed films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kamins, T. I., Polycrystalline Silicon for Integrated Circuit Applications, Kluwer Academic Publishers, Boston (1988).Google Scholar
2. Howe, R. T., J. Vac. Sci. Tech., B6, p. 1809 (1988).Google Scholar
3. W, ,. Sharpe, N., Yuan, B., and Vaidyanathan, R., SPIE Proc, 2880, p. 79 (1996).Google Scholar
4. Fox, J., et al., presented in Symposium on Polycrystalline Thin Films III, MRS, San Francisco (April 1997).Google Scholar
5. Kamins, T. I. and Cass, T. R., Thin Solid Films, 16, p. 147 (1973).Google Scholar
6. Kamins, T. I., Mandurah, M. M., and Saraswat, K. C., J. Electrochem. Soc., 125, p. 927 (1978).Google Scholar
7. Kamins, T. I., J. Electrochem. Soc., 127, p. 927 (1980).Google Scholar
8. Thompson, C. V., Ann. Rev. Mater. Sci., 20, p. 245 (1990).Google Scholar
9. Wada, Y. and Nishimatsu, S., J. Electrochem. Soc., 125, p. 1499 (1978).Google Scholar
10. Pope, D. P. and Chu, F., in Twinning in Advanced Materials (editors: Yoo, M. H. and Wuttig, M.), TMS, p. 169 (1994).Google Scholar
11. Shechtman, D. and Hutchison, J. L., in Twinning in Advanced Materials (editors: Yoo, M. H. and Wuttig, M.), TMS, p. 133 (1994).Google Scholar