Hostname: page-component-669899f699-2mbcq Total loading time: 0 Render date: 2025-04-26T18:26:18.151Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Evolution During the Epitaxial Growth of Ag/InP (100)

Published online by Cambridge University Press:  21 February 2011

Mohan Krishnamurthy  and
Jeff S. Drucker
Mohan Krishnamurthy
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton MI 49931
Jeff S. Drucker
Affiliation:
Department of Physics, University of Texas, El-Paso, TX 79968
Get access

Abstract

The initial stages of epitaxial growth of Ag on InP(100) has been studied using in-situ and ex-situ electron microscopy techniques. Vicinal InP substrates were cleaned by heating to about 450°C in ultra-high vacuum. Silver was subsequently deposited at substrate temperatures between 350–500°C. The microstructural evolution was monitored for coverages between 0.5 – 8ML using high spatial resolution secondary electron microscopy and transmission electron microscopy.

At sub-monolayer coverages, square islands of Ag are formed with edges aligned along InP <110> directions. Subsequent deposition leads to secondary nucleation or growth of pre-existing islands, depending on the substrate temperature. Surfaces with a uniform distribution of steps have a higher island density than those without steps but the steps are not preferred sites for island nucleation. Coalescence of islands begins at a smaller coverage for lower temperatures and for stepped surfaces. At the early stages of coalescence, island shapes with low symmetry are formed, with diminished island heights. These subsequently transform into shapes of higher symmetry. Except at the highest temperatures studied (500°C), island shape transformations (e.g. from square to elongated) are not very significant. Plan view transmission electron microscopy shows that the islands are epitaxially aligned and that even the smallest islands are generally incoherent. Island size distributions are used to analyze the growth mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 59
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Weizer, V. G. and Fatemi, N. S., J. Appl. Phys., 73, 2353 (1993); for earlier work see for example,Google Scholar
Saidane, A. and Kirk, D. L., J. Phys. D, 18, 1609 (1985) and references therein.Google Scholar
[2] Tersoff, J. and Tromp, R. M., Phys. Rev. Lett., 70, 2782 (1993).Google Scholar
[3] See for example, Traias, B. M., Yang, Y.-N., Seifert, R. L. and Weaver, J. H., Phys. Rev. B, 43, 14107 (1991) and references therein.Google Scholar
[4] Luo, F. C. H., Hembree, G. G., Venables, J. A., Mat. Res. Soc. Symp. Proc. 202, 49 (1991).Google Scholar
[5] Kamigaki, K., Ishida, M., Niboshi, M., Terauchi, H. and Sano, N., Phys. Rev. Lett., 68, 2317 (1992).Google Scholar
[6] Evans, D. A., Alonso, M., Cimino, R. and Horn, K., Phys. Rev. Lett., 70, 3483 (1993).Google Scholar
[7] Hembree, G. G. et al, Ultramicroscopy, 25, 183 (1989).Google Scholar
[8] Krishnamurthy, M., Drucker, J. S. and Venables, J.A., J. Appl. Phys., 69, 6461 (1991).Google Scholar
[9] Yano, M., Yokose, H., Iwai, Y. and Inoue, M., J. Cryst. Growth, 111, 609 (1991).Google Scholar
[10] Fukui, T. and Saito, H., Appl. Phys. Lett., 50, 824 (1987); also see,Google Scholar
Williams, D. R. M. and Krishnamurthy, M., Appl. Phys. Lett., 62, 1350 (1992).Google Scholar