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Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and Tem

Published online by Cambridge University Press:  25 February 2011

M. P. de Boer ,
J. E. Angelo ,
A. M. Dabiran ,
P. I. Cohen  and
W. W. Gerberich
M. P. de Boer
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J. E. Angelo
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. M. Dabiran
Affiliation:
Dept of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
P. I. Cohen
Affiliation:
Dept of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
W. W. Gerberich
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

Atomic Force Microscopy (AFM) images are correlated with Transmission Electron Microscopy (TEM) plan-view images in a structure consisting of <111> oriented GaAs layers grown by molecular beam epitaxy (MBE) at 500°C. We present results on the applicability of AFM, which requires short sample preparation and imaging time relative to TEM, in obtaining information on twin density and growth pits of these low temperature samples. Also, we discuss the behavior of twin boundaries by comparing plan-views and cross sectional TEM images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 631
Copyright
Copyright © Materials Research Society 1993

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References

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