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Microraman Study of Laser Ablated Gaas

Published online by Cambridge University Press:  21 February 2011

C. García ,
J. Jiménez ,
A.C. Prieto ,
J. Ramos  and
L.F. Sanz
C. García
Affiliation:
Física de la Materia Condensada, Cristalografía y MineralogíaFacultad de Ciencias and ETSIL, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Física de la Materia Condensada, Cristalografía y MineralogíaFacultad de Ciencias and ETSIL, 47011 Valladolid, Spain
A.C. Prieto
Affiliation:
Física de la Materia Condensada, Cristalografía y MineralogíaFacultad de Ciencias and ETSIL, 47011 Valladolid, Spain
J. Ramos
Affiliation:
Física de la Materia Condensada, Cristalografía y MineralogíaFacultad de Ciencias and ETSIL, 47011 Valladolid, Spain
L.F. Sanz
Affiliation:
Física de la Materia Condensada, Cristalografía y MineralogíaFacultad de Ciencias and ETSIL, 47011 Valladolid, Spain
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Abstract

Morphologic and structural changes induced by UV pulsed laser beams on GaAs are studied by means of surface inspection (optical interferometry) and MicroRaman spectroscopy. Crystal order and chemical composition (dopant distribution ) are shown to be changed by the ablation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 687
Copyright
Copyright © Materials Research Society 1995

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References

1 Rys, -A., Shieh, Y., Compaan, A., Yao, H. and Bhat, A.; Opt. Engineering 29, 329 (1990).Google Scholar
2 Imanaga, -S., Kawai, H., Kajiwara, K., Kaneko, K. and Watanabe, N.; J. Appl. Phys. 62,2381 (1987).Google Scholar
3 Lao, -P., Tang, W.C., Rajkumar, K.C., Guha, S., Madhukar, A., Lin, J.K. and Gunthaner, F.J.; J. Appl. Phys. 67, 6445 (1990).Google Scholar
4 Jiménez, -J., Martín, E., Garcia, B.J. and Piqueras, J.; Appl. Phys. A 55 566 (1992).Google Scholar
5 Licata, -T.J., Podlesnik, D.V., Tang, Hua and Osgood, R.M. Jr.; J. Vac. Sci. Techol. A 18, 1618 (1990).Google Scholar
6 Kawamura, -T. and Kamejima, T.; J. Appl. Phys. 61, 2878 (1987).Google Scholar
7 Jiménez, -J., González, M.A., Martin, B. and Calvo, B.; J. Cryst. Growth 103, 54 (1990).Google Scholar
8 Montgomery, -P.C., Fillard, J.P., Castagne, M. and Montaner, D.; Semicond. Sci. Technol. 7A, 237 (1992).Google Scholar
9 Pollak, -F.H.; Analitical Raman Spectroscopy. ed. by Grasselli, G.; and Bulkin, B.J.; Chemical Analysis Series, vol. 114 (J. Wiley, N4 1991) Ch6 p. 137.Google Scholar
10 Jiménez, -J., Martin, E., Prieto, A.C. and Torres, A.; Semicond. Sci. Technol. 7, 288 (1992)Google Scholar
11 Eing Davies, -D., Lorenzo, J.P. and Ryan, T.G.; Appl. Phys. Lett. 37, 612 (1980).Google Scholar
12 Kivillov, -D., Vichr, M. and Powell, R.A.; Appl. Phys. Lett. 50, 262 (1987)Google Scholar