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Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes

Published online by Cambridge University Press:  11 February 2011

A. Sarua ,
M. Kuball ,
M. J. Uren ,
A. Chitnis ,
J. P. Zhang ,
V. Adivarahan ,
M. Shatalov  and
M. Asif Khan
A. Sarua
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
M. Kuball
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
M. J. Uren
Affiliation:
QinetiQ Ltd, Malvern WR14 3PS, United Kingdom
A. Chitnis
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
J. P. Zhang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
V. Adivarahan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
M. Shatalov
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
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Abstract

Ultraviolet light emitting diodes (LED) based on GaN and its ternary alloy AlGaN are key devices for applications such as solid state white lighting and chemical sensing. Ultraviolet LEDs are prone to self-heating effects, i.e., temperature rises during operation, contributing significantly to the commonly observed saturation of light output power at relatively low input currents. Rather little, however, is known about the actual device temperature of an operating ultraviolet LED. Using micro-Raman spectroscopy temperature measurements were performed as a function of input current on 325nm-Al0.18Ga0.82N/Al0.12Ga0.88N multiple quantum wells LEDs grown on sapphire substrates, flip-chip mounted on SiC for heat-sinking. Temperature maps were recorded over the active device area. Temperature rises of about 65 °C were measured at input currents as low as 50mA (at 8V) for 200 μm x 200 μm size LEDs despite flipchip mounting the devices. Temperature rises at the device edges were found to be higher than in the device center, due to combined heat sinking and current crowding effects. Finite difference heat dissipation simulations were performed and compared to the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.8
Copyright
Copyright © Materials Research Society 2003

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References

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