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Microcrystalline Silicon Thin film Growth and Simultaneous Etching of Amorphous Material

Published online by Cambridge University Press:  28 February 2011

M. Heintze ,
R. Zedlitz  and
W. Westlake
M. Heintze
Affiliation:
I.P.E., Universitat Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany.
R. Zedlitz
Affiliation:
I.P.E., Universitat Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany.
W. Westlake
Affiliation:
Dept of A.P.E.M.E., Dundee University, Dundee, DD1 4HN, Scottland.
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Abstract

An investigation of silicon plasma deposition and etching using both a VHF plasma in dilute SiH4/H2 and the pulsed silane flow method is presented. It is possible to find preparation conditions at which simultaneous growth of µc-Si:H and etching of amorphous silicon (a-Si:H) on the same substrate is observed. The results clearly demonstrate that microcrystalline silicon growth proceeds via the preferential etching of amorphous tissue during film growth, and that observations of crystallization during hydrogen plasma treatment without etching are due to chemical transport of silicon within the reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 733
Copyright
Copyright © Materials Research Society 1995

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References

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