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Microcrystalline β-SiC Growth on Si by ECR-CVD at 500°C

Published online by Cambridge University Press:  28 February 2011

Kuan-Lun Cheng ,
Chih-Chien Liu ,
Huang-Chung Cheng ,
Chiapyng Lee  and
Tri-Rung Yew
Kuan-Lun Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chih-Chien Liu
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Huang-Chung Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chiapyng Lee
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

Microcrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 799
Copyright
Copyright © Materials Research Society 1995

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