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MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Published online by Cambridge University Press:  11 February 2011

P. Victor ,
S. Bhattacharyya ,
S. Saha  and
S. B. Krupanidhi
P. Victor
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore 560012, India
S. Bhattacharyya
Affiliation:
Max-Planck-Institut fur Mikrostrukturphysik, Halle, Germany
S. Saha
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL-60439, USA
S. B. Krupanidhi
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore 560012, India
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Abstract

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U7.3/T2.3
Copyright
Copyright © Materials Research Society 2003

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References

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