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The Meyer-Neldel Relation and Analysis of the Field-Effect In Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Ruud E. I. Schropp ,
Jan Snijder  and
Jan F. Verwey
Ruud E. I. Schropp
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
Jan Snijder
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
Jan F. Verwey
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
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Abstract

The dependence of the conductance prefactor on the activation energy in accordance with the Meyer-Neldel relation has been observed in a-Si:H, by measuring the temperature dependence of the field-effect in a-Si:H thin-film transistors. The Meyer-Neldel rule is for the first time properly taken into account in the analysis of the field-effect, thereby considering the non-uniform shift of the Fermi-level as induced by the gate bias. The analysis also yields the flat-band voltage, which is an important parameter in the density of states evaluation. The density of states is shown to be considerably overestimated in conventional analysis.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 173
Copyright
Copyright © Materials Research Society 1986

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References

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